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DMC3028LSDX-13

P1-P3P4-P6P7-P9
DMC3028LSDX
Document number: DS36210 Rev. 4 - 2
1 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC3028LSDX
ADVANCE INFO R MA T I O N
ADVANCED I NF ORMATION
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V
(BR)DSS
R
DS(ON)
max
Q1
30V
27mΩ @ V
GS
= 10V
35mΩ @ V
GS
= 4.5V
Q2
-30V
25mΩ @ V
GS
= -10V
41mΩ @ V
GS
= -4.5V
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive-Compliant Part is Available Under Separate
Datasheet (DMC3028LSDXQ)
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC3028LSDX-13
SO-8
2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
Top View
Pin Configuration
Equivalent Circuit
D1S1
G1
S2
G2
D1
D2
D2
Top View
Logo
Part no
.
Year: “11” = 2011
1
4
8
5
3028SDX
YY
WW
Xth week: 01 ~ 53
e3
D
1
S
1
G
1
D
2
S
2
G
2
Q N-Channel MOSFET
Q2 P-Channel MOSFET
DMC3028LSDX
Document number: DS36210 Rev. 4 - 2
2 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC3028LSDX
ADVANCE INFO R MA T I O N
ADVANCED I NF ORMATION
Maximum Ratings – Q1 and Q2 (@T
A
= +25°C, unless otherwise specified.)
Thermal Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 5)
T
A
= +25°C
P
D
1.2
W
T
A
= +70°C
0.75
Thermal Resistance, Junction to Ambient (Note 5)
Steady state
R
θJA
108
°C/W
t<10s
65
Total Power Dissipation (Note 6)
T
A
= +25°C
P
D
1.5
W
T
A
= +70°C
0.95
Thermal Resistance, Junction to Ambient (Note 6)
Steady state
R
θJA
85
°C/W
t<10s
50
Thermal Resistance, Junction to Case (Note 6)
R
θJC
14.5
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150
°C
Electrical Characteristics – Q1 (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
30
V
V
GS
= 0V, I
D
= 250µA
Zero Gate Voltage Drain Current
I
DSS


1
µA
V
DS
= 24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
1
3
V
V
DS
= V
GS
, I
D
= 250µA
Static Drain-Source On-Resistance
R
DS (ON)
19
27
mΩ
V
GS
= 10V, I
D
= 6A
22
35
V
GS
= 4.5V, I
D
= 5A
Diode Forward Voltage
V
SD
0.7
1.2
V
V
GS
= 0V, I
S
= 1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
641
pF
V
DS
= 15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
66
Reverse Transfer Capacitance
C
rss
51
Gate Resistance
R
G

2.2

V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= 4.5V)
Q
g
6
nC
V
DS
= 15V, I
D
= 10A
Total Gate Charge (V
GS
= 10V)
Q
g

13.2

Gate-Source Charge
Q
gs
1.7
Gate-Drain Charge
Q
gd
2.2
Turn-On Delay Time
t
D(on)
3.3
nS
V
GS
= 10V, V
DD
= 15V, R
G
= 6,
I
D
= 1A
Turn-On Rise Time
t
r
4.4
Turn-Off Delay Time
t
D(off)
22.3
Turn-Off Fall Time
t
f

5.3

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
rating are based on low frequency and duty cycles to keep T
J
= +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
Characteristic
Symbol
Q1
Q2
Units
Drain-Source Voltage
V
DSS
30
-30
V
Gate-Source Voltage
V
GSS
±20
±20
V
Continuous Drain Current (Note 5) V
GS
=10V
Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
5.5
4.1
-5.8
-4.3
A
t<10s
T
A
= +25°C
T
A
= +70°C
I
D
7.2
5.7
-7.6
-6.1
A
Maximum Body Diode Forward Current (Note 5)
I
S
2.2
-2.2
A
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
DM
40
-30
A
Avalanche Current (Note 7) L = 0.1mH
I
AS
14.5
-22
A
Avalanche Energy (Note 7) L = 0.1mH
E
AS
10.5
25
mJ
DMC3028LSDX
Document number: DS36210 Rev. 4 - 2
3 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC3028LSDX
ADVANCE INFO R MA T I O N
ADVANCED I NF ORMATION
Electrical Characteristics – Q2 (@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BV
DSS
-30
V
V
GS
= 0V, I
D
= -250µA
Zero Gate Voltage Drain Current
I
DSS


-1
µA
V
DS
= -24V, V
GS
= 0V
Gate-Source Leakage
I
GSS
100
nA
V
GS
= 20V, V
DS
= 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
V
GS(th)
-1
-3
V
V
DS
= V
GS
, I
D
= -250µA
Static Drain-Source On-Resistance
R
DS (ON)
21
25
mΩ
V
GS
= -10V, I
D
= -6A
29
41
V
GS
= -4.5V, I
D
= -5A
Diode Forward Voltage
V
SD
-0.7
-1.2
V
V
GS
= 0V, I
S
= -1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
C
iss
1,241
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
146
Reverse Transfer Capacitance
C
rss
110
Gate Resistance
R
G

14.8

Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge (V
GS
= -4.5V)
Q
g
10.9
nC
V
DS
= -15V, I
D
= -7A
Total Gate Charge (V
GS
= -10V)
Q
g

22

Gate-Source Charge
Q
gs
3.5
Gate-Drain Charge
Q
gd
4.7
Turn-On Delay Time
t
D(on)
9.7
nS
V
GS
= -10V, V
DD
= -15V, R
GEN
= 6Ω,
I
D
= -7A
Turn-On Rise Time
t
r
17.1
Turn-Off Delay Time
t
D(off)
60.5
Turn-Off Fall Time
t
f

40.4

Notes: 8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
P1-P3P4-P6P7-P9

DMC3028LSDX-13

Mfr. #:
Buy DMC3028LSDX-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET 30V Dual FET 28mOHm 10V VGS 7.1A
Lifecycle:
New from this manufacturer.
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