NTD4856N-1G Datasheet NTD4856NT4G, NTD4856N-1G, NTD4856N-35G | P1-P3

April, 2017 − Rev. 4

1 Publication Order Number:

NTD4856N/D

NTD4856N, NVD4856N

Power MOSFET

25 V, 89 A, Single N−Channel, DPAK/IPAK

Features

• Trench Technology

• Low R

DS(on)

to Minimize Conduction Losses

• Low Capacitance to Minimize Driver Losses

• Optimized Gate Charge to Minimize Switching Losses

• NVD Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Applications

• VCORE Applications

• DC−DC Converters

• Low Side Switching

MAXIMUM RATINGS (T

J

= 25°C unless otherwise stated)

Parameter Symbol Value Unit

Drain−to−Source Voltage V

DSS

25 V

Gate−to−Source Voltage V

GS

±20 V

Continuous Drain

Current R

q

JA

(Note 1)

Steady

State

T

A

= 25°C

I

D

16.8

A

T

A

= 85°C 13.0

Power Dissipation

R

q

JA

(Note 1)

T

A

= 25°C P

D

2.14 W

Continuous Drain

Current R

q

JA

(Note 2)

T

A

= 25°C

ID

13.3

A

T

A

= 85°C 10.3

Power Dissipation

R

q

JA

(Note 2)

T

A

= 25°C P

D

1.33 W

Continuous Drain

Current R

q

JC

(Note 1)

T

C

= 25°C

I

D

89

A

T

C

= 85°C 69

Power Dissipation

R

q

JC

(Note 1)

T

C

= 25°C P

D

60 W

Pulsed Drain

Current

t

p

=10ms

T

A

= 25°C I

DM

179 A

Current Limited by Package T

A

= 25°C I

DmaxPkg

45 A

Operating Junction and Storage

Temperature

T

J

,

T

STG

−55 to

+175

°C

Source Current (Body Diode) I

S

50 A

Drain to Source dV/dt dV/dt 6 V/ns

Single Pulse Drain−to−Source Avalanche

Energy (T

J

= 25°C, V

DD

= 50 V, V

GS

= 10 V,

I

L

= 19 A

pk

, L = 1.0 mH, R

G

= 25 W)

EAS 180.5 mJ

Lead Temperature for Soldering Purposes

(1/8” from case for 10 s)

T

L

260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

MARKING DIAGRAMS

& PIN ASSIGNMENTS

www.onsemi.com

V

(BR)DSS

R

DS(ON)

MAX I

D

MAX

25 V

4.7 mW @ 10 V

89 A

6.8 mW @ 4.5 V

G

S

N−Channel

D

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

AYWW

48

56NG

1

Gate

2

Drain

3

Source

4

Drain

4

Drain

2

Drain

1

Gate

3

Sourc

e

4

Drain

2

Drain

1

Gate

3

Source

AYWW

48

56NG

AYWW

48

56NG

A = Assembly Location*

Y = Year

WW = Work Week

4856N = Device Code

G = Pb−Free Package

DPAK

CASE 369AA

(Bent Lead)

STYLE 2

IPAK

CASE 369D

(Straight Lead

DPAK) STYLE 2

1

2

3

4

1

2

3

4

3 IPAK

CASE 369AC

(Straight Lead)

1

2

3

4

* The Assembly Location Code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package bottom (molding ejecter

pin), the front side assembly code may be blank.

NTD4856N, NVD4856N

www.onsemi.com

2

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter Symbol Value Unit

Junction−to−Case (Drain)

R

q

JC

2.5

°C/W

Junction−to−TAB (Drain)

R

q

JC−TAB

3.5

Junction−to−Ambient – Steady State (Note 1)

R

q

JA

70

Junction−to−Ambient – Steady State (Note 2)

R

q

JA

113

1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.

2. Surface−mounted on FR4 board using the minimum recommended pad size.

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified)

Parameter Symbol Test Condition Min Typ Max Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= 250 mA

25 V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/

T

J

23

mV/°C

Zero Gate Voltage Drain Current I

DSS

V

GS

= 0 V,

V

DS

= 20 V

T

J

= 25°C 1.0

mA

T

J

= 125°C 10

Gate−to−Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±20 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= 250 mA

1.45 2.5 V

Negative Threshold Temperature

Coefficient

V

GS(TH)

/T

J

5.9

mV/°C

Drain−to−Source On Resistance R

DS(on)

V

GS

= 10 V I

D

= 30 A 3.9 4.7

mW

V

GS

= 4.5 V I

D

= 30 A 5.3 6.8

Forward Transconductance g

FS

V

DS

= 1.5 V, I

D

= 15 A 73 S

CHARGES AND CAPACITANCES

Input Capacitance C

ISS

V

GS

= 0 V, f = 1.0 MHz, V

DS

= 12 V

2241

pF

Output Capacitance C

OSS

567

Reverse Transfer Capacitance C

RSS

279

Total Gate Charge Q

G(TOT)

V

GS

= 4.5 V, V

DS

= 15 V, I

D

= 30 A

18 27

nC

Threshold Gate Charge Q

G(TH)

3.4

Gate−to−Source Charge Q

GS

6.7

Gate−to−Drain Charge Q

GD

6.6

Total Gate Charge Q

G(TOT)

V

GS

= 10 V, V

DS

= 15 V, I

D

= 30 A 38 nC

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

V

GS

= 4.5 V, V

DS

= 15 V,

I

D

= 15 A, R

G

= 3.0 W

15.7

ns

Rise Time t

r

22.5

Turn−Off Delay Time t

d(OFF)

18.6

Fall Time t

f

7.5

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD4856N, NVD4856N

www.onsemi.com

3

ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise specified) (continued)

Parameter UnitMaxTypMinTest ConditionSymbol

SWITCHING CHARACTERISTICS (Note 4)

Turn−On Delay Time

t

d(ON)

V

GS

= 11.5 V, V

DS

= 15 V,

I

D

= 15 A, R

G

= 3.0 W

8.7

ns

Rise Time t

r

17.5

Turn−Off Delay Time t

d(OFF)

27.2

Fall Time t

f

4.0

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V,

I

S

= 30 A

T

J

= 25°C 0.87 1.2

V

T

J

= 125°C 0.72

Reverse Recovery Time t

RR

V

GS

= 0 V, dIS/dt = 100 A/ms,

I

S

= 30 A

18.7

ns

Charge Time t

a

9.3

Discharge Time t

b

9.4

Reverse Recovery Charge Q

RR

8.0 nC

PACKAGE PARASITIC VALUES

Source Inductance

L

S

T

A

= 25°C

2.49

nH

Drain Inductance, DPAK L

D

0.0164

Drain Inductance, IPAK L

D

1.88

Gate Inductance L

G

3.46

Gate Resistance R

G

0.6

W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTD4856N-1G

NTD4856N-1G

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