NTD4856N, NVD4856N
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
10 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
I
D
, DRAIN CURRENT (AMPS)
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
I
DSS
, LEAKAGE (nA)
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 125°C
V
GS
= 4.5 V
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
T
J
= 125°C
T
J
= 25°C
3.8 V
2.6 V
4 V
4.2 V
3.6 V
2.8 V
3.2 V
3.4 V
I
D
= 30 A
T
J
= 25°C
V
GS
= 11.5 V
T
J
= 25°C
0
10
20
30
40
50
60
70
012345
80
90
100
0
10
20
30
40
50
60
70
012345
80
90
100
110
120
130
0
0.01
0.02
0.03
0.04
246810
0.002
0.0035
0.005
0.0065
0.008
20 40 60 80 10030 50 70 90
0.003
0.0045
0.006
0.0075
0.0025
0.004
0.0055
0.007
0.6
0.8
1.0
1.2
1.4
−50 0 50 100 150
1.6
1.8
−25 25 75 125 175
100
1000
510152025
10000
