SOT23 PNP SILICON PLANAR
SMALL SIGNAL TRANSISTORS
ISSUE 2 FEBRUARY 95
PARTMARKING DETAIL
BCW61A BA BCW61AR CA
BCW61B BB BCW61BR CB
BCW61C BC BCW61CR CC
BCW61D BD BCW61DR CD
COMPLEMENTARY TYPE BCW60
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
CBO
-32 V
Collector-Emitter Voltage V
CEO
-32 V
Emitter-Base Voltage V
EBO
-5 V
Continuous Collector Current I
C
-200 mA
Base Current I
B
-50 mA
Power Dissipation at T
amb
=25°C P
TOT
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
FOUR TERMINAL NETWORK DATA (I
c
=2mA, V
CE
=5V, f=1kHz)
h
FE
Group A h
FE
Group B h
FE
GroupC h
FE
Group D
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
h
11e
1.6 2.7 4.5 2.5 3.6 6.0 3.2 4.5 8.5 4.5 7.5 12
k
Ω
h
12e
1.5 2 2 3 10
-4
h
21e
200 260 330 520
h
22e
18 30 24 50 30 60 50 100
µS
S
W
BCW61
PAGE NO
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
-32 V I
CEO
=-2mA
Emitter-Base
Breakdown Voltage
V
(BR)EBO
-5 V
I
EBO
=-1µA
Collector-Emitter Cut-off
Current
I
CES
-20
-20
nA
µA
V
CES
=-32V
V
CES
=-32V ,T
amb
=150
o
C
Emitter-Base Cut-Off Current I
EBO
-20 nA V
EBO
=-4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.12
-0.25
-0.25
-0.55
V
V
I
C
=-10mA,I
B
=
-0.25mA
I
C
=-50mA, I
B
=-1.25mA
Base-Emitter
Saturation Voltage
V
BE(sat)
-0.60
-0.68
-0.70
-0.80
-0.85
-1.05
V
V
I
C
=-10mA, I
B
=-0.25mA
I
C
=-50mA, I
B
=-1.25mA
Base - Emitter Voltage V
BE
-0.6
-0.55
-0.65
-0.72
-0.75
V
V
V
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
Static BCW61A
Forward
Current
Transfer BCW61B
Ratio
BCW61C
BCW61D
h
FE
120
60
140
170 220
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
30
180
80
200
250 310
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
40
250
100
270
350 460
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
100
380
110
340
500 630
I
C
=-10µA, V
CE
=-5V
I
C
=-2mA, V
CE
=-5V
I
C
=-50mA, V
CE
=-1V
Transition Frequency f
T
180 MHz I
C
=10mA, V
CE
= -5V
f = 100MHz
Emitter-Base Capacitance C
ebo
11 pF V
EBO
= -0.5V,f =1MHz
Collector-Base Capacitance C
cbo
6pFV
CBO
= -10V, f =1MHz
Noise Figure N 2 6 dB I
C
=- 0.2mA, V
CE
=- 5V
R
G
=2KΩ, f=1KHz
∆f=200Hz
Switching times:
Delay Time
Rise Time
Turn-on Time
Storage Time
Fall Time
Turn-Off Time
t
d
t
r
t
on
t
s
t
f
t
off
35
50
85
400
80
480
150
800
ns
ns
ns
ns
ns
ns
-I
C
: -I
B1
: I
B2
=10:1:1mA
R
1
=R
2
=5KΩ
V
BB
=-3.6V, R
L
=990Ω
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
Spice parameter data is available upon request for this device
C
B
E
BCW61
R
R R
50Ω
V
CC
(-10V)+V
BB
-10V
t
r
< 5nsec
Z
in
≥ 100kΩ
Oscilloscope
1µsec
Mark/Space ratio < 0.01
Z
s
=50
Ω
BAY 63
t
r
< 5nsec
