IRG4BC30K-SPbF
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 67 100 I
C
= 16A
Q
ge
Gate - Emitter Charge (turn-on) 11 16 nC V
CC
= 400V See Fig.8
Q
gc
Gate - Collector Charge (turn-on) 25 37 V
GE
= 15V
t
d(on)
Turn-On Delay Time 26
t
r
Rise Time 28 T
J
= 25°C
t
d(off)
Turn-Off Delay Time 130 200 I
C
= 16A, V
CC
= 480V
t
f
Fall Time 120 170 V
GE
= 15V, R
G
= 23Ω
E
on
Turn-On Switching Loss 0.36 Energy losses include "tail"
E
off
Turn-Off Switching Loss 0.51 mJ See Fig. 9,10,14
E
ts
Total Switching Loss 0.87 1.3
t
sc
Short Circuit Withstand Time 10 µs V
CC
= 400V, T
J
= 125°C
V
GE
= 15V, R
G
= 23Ω , V
CPK
< 500V
t
d(on)
Turn-On Delay Time 25 T
J
= 150°C,
t
r
Rise Time 29 I
C
= 16A, V
CC
= 480V
t
d(off)
Turn-Off Delay Time 190 V
GE
= 15V, R
G
= 23Ω
t
f
Fall Time 190 Energy losses include "tail"
E
ts
Total Switching Loss 1.2 mJ See Fig. 11,14
E
on
Turn-On Switching Loss 0.26 T
J
= 25°C, V
GE
= 15V, R
G
= 23Ω
E
off
Turn-Off Switching Loss 0.36 mJ I
C
= 14A, V
CC
= 480V
E
ts
Total Switching Loss 0.62 Energy losses include "tail"
L
E
Internal Emitter Inductance 7.5 nH Measured 5mm from package
C
ies
Input Capacitance 920 V
GE
= 0V
C
oes
Output Capacitance 110 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 27 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 600 V V
GE
= 0V, I
C
= 250µA
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage 18 V V
GE
= 0V, I
C
= 1.0A
∆V
(BR)CES
/∆T
J
Temperature Coeff. of Breakdown Voltage 0.54 V/°C V
GE
= 0V, I
C
= 1.0mA
2.21 I
C
= 14A
2.21 2.7 I
C
= 16A V
GE
= 15V
2.88 I
C
= 28A See Fig.2, 5
2.36 I
C
= 16A , T
J
= 150°C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250µA
∆V
GE(th)
/∆T
J
Temperature Coeff. of Threshold Voltage -12 mV/°C V
CE
= V
GE
, I
C
= 250µA
g
fe
Forward Transconductance 5.4 8.1 S V
CE
= 100V, I
C
= 16A
250 V
GE
= 0V, V
CE
= 600V
I
CES
Zero Gate Voltage Collector Current 2.0 µ A V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
1100 V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
I
GES
Gate-to-Emitter Leakage Current ±100 n A V
GE
= ±20V
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
VV
CE(ON)
Collector-to-Emitter Saturation Voltage
Details of note through are on the last page
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
