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SI4435DDY-T1-GE3

P1-P3P4-P6P7-P9
www.vishay.com
4
Document Number: 68841
S09-0863-Rev. C, 18-May-09
Vishay Siliconix
Si4435DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
0.01
0.001
0.1
10
100
T
J
= 150 °C
T
J
= - 50 °C
T
J
= 25 °C
V
SD
-Source-to-Drain Voltage (V)
I
S
- Source Current (A)
- 0.2
0.0
0.2
0.4
0.6
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
I
D
=1mA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0
0.01
0.02
0.03
0.04
0.05
0.06
012345678 910
T
J
= 25 °C
T
J
= 125 °C
I
D
=9.1A
- On-Resistance (Ω)
R
DS(on)
V
GS
- Gate-to-Source Voltage (V)
0
20
40
60
80
100
011100.00.01
Time (s)
Power (W)
0.1
Safe Operating Area
100
1
0.1 1 10 100
0.01
10
0.1
T
A
= 25 °C
Single Pulse
Limited byR
DS(on)
*
BVDSS Limited
1ms
100 µs
10 ms
1s
10 s
100 ms
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
- Drain Current (A)
I
D
100 s, DC
Vishay Siliconix
Si4435DDY
Document Number: 68841
S09-0863-Rev. C, 18-May-09
www.vishay.com
5
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
0
3
6
9
12
15
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
I
D
- Drain Current (A)
Power, Junction-to-Foot
0.0
1.2
2.4
3.6
4.8
6.0
0255075100125150
T
C
- Case Temperature (°C)
Power (W)
Power Derating, Junction-to-Ambient
0.0
0.4
0.8
1.2
1.6
2.0
0 25 50 75 100 125 150
T
A
-Ambient Temperature (°C)
Power (W)
www.vishay.com
6
Document Number: 68841
S09-0863-Rev. C, 18-May-09
Vishay Siliconix
Si4435DDY
New Product
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?68841
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
000110110
-1
10
-4
100
0.2
0.1
0.05
0.02
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
0.01
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 85 °C/W
3. T
JM
- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Duty Cycle = 0.5
1
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1
0.1
0.01
P1-P3P4-P6P7-P9

SI4435DDY-T1-GE3

Mfr. #:
Buy SI4435DDY-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -30V Vds 20V Vgs SO-8
Lifecycle:
New from this manufacturer.
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