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VDI 25-12P1 VII 25-12P1
VID 25-12P1 VIO 25-12P1
0650
B3
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current
Fig. 9 Typ. turn on energy and switching Fig. 10 Typ. turn off energy and switching
times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0102030
0
2
4
6
0
40
80
120
0 102030
0
2
4
6
0
200
400
600
0,00001 0,0001 0,001 0,01 0,1 1 10
0,0001
0,001
0,01
0,1
1
10
0 20 40 60 80 100 120 140
0,0
0,5
1,0
1,5
2,0
0
200
400
600
800
0 20 40 60 80 100 120 140
0
1
2
3
0
50
100
150
single pulse
VDI...25-12P1
V
CE
= 600V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
0 200 400 600 800 1000 1200 1400
0
10
20
30
40
R
G
= 82 Ω
T
VJ
= 125°C
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
E
on
t
d(on)
t
r
E
off
t
d(off)
t
f
I
C
A
I
C
A
E
off
E
on
t
t
R
G
Ω
R
G
Ω
V
CE
t
s
mJ
E
on
mJ
E
off
ns
t
ns
t
I
CM
K/W
Z
thJC
IGBT
diode
V
A
mJ
ns
ns
mJ
25T120
25T120
25T120
25T120
25T120
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
V
CE
= 600V
V
GE
= ±15V
R
G
= 82Ω
T
VJ
= 125°C
V
CE
= 600V
V
GE
= ±15V
I
C
= 15A
T
VJ
= 125°C
