APT58M50JCU2
APT58M50JCU2 – Rev 1 October, 2012
www.microsemi.com
2-6
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
T
j
= 25°C 250
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500V
V
GS
= 0V
T
j
= 125°C 1000
µA
R
DS(on)
Drain – Source on Resistance V
GS
= 10V, I
D
= 42A
65
m
V
GS(th)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 2.5mA 3 4 5 V
I
GSS
Gate – Source Leakage Current V
GS
= ±30 V ±100 nA
Dynamic Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance 10800
C
oss
Output Capacitance 1164
C
rss
Reverse Transfer Capacitance
V
GS
= 0V
V
DS
= 25V
f = 1MHz
148
pF
Q
g
Total gate Charge 340
Q
gs
Gate – Source Charge 75
Q
gd
Gate – Drain Charge
V
GS
= 10V
V
Bus
= 250V
I
D
= 42A
155
nC
T
d(on)
Turn-on Delay Time 60
T
r
Rise Time 70
T
d(off)
Turn-off Delay Time 155
T
f
Fall Time
Resistive switching @ 25°C
V
GS
= 15V
V
Bus
= 333V
I
D
= 42A
R
G
= 2.2
50
ns
SiC chopper diode ratings and characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Maximum Peak Repetitive Reverse Voltage
600 V
T
j
= 25°C 100 400
I
RM
Maximum Reverse Leakage Current V
R
=600V
T
j
= 175°C 200 2000
µA
I
F
DC Forward Current Tc = 100°C 20 A
T
j
= 25°C 1.6 1.8
V
F
Diode Forward Voltage I
F
= 20A
T
j
= 175°C 2 2.4
V
Q
C
Total Capacitive Charge
I
F
= 20A, V
R
= 300V
di/dt =800A/µs
28 nC
f = 1MHz, V
R
= 200V 130
C Total Capacitance
f = 1MHz, V
R
= 400V 100
pF
Thermal and package characteristics
Symbol Characteristic Min Typ Max Unit
Mosfet 0.23
R
thJC
Junction to Case Thermal Resistance
SiC Diode 1.35
R
thJA
Junction to Ambient (IGBT & Diode) 20
°C/W
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
2500 V
T
J
,T
STG
Storage Temperature Range -40 150
T
L
Max Lead Temp for Soldering:0.063” from case for 10 sec 300
°C
Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m
Wt Package Weight 29.2 g
