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BC846B,215

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
BC846_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 9 — 25 September 2012 3 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter - 80 V
V
CEO
collector-emitter voltage open base - 65 V
V
EBO
emitter-base voltage open collector - 6 V
I
C
collector current - 100 mA
I
CM
peak collector current single pulse;
t
p
1ms
-200mA
I
BM
peak base current single pulse;
t
p
1ms
-200mA
P
tot
total power dissipation T
amb
25 C
[1]
SOT23 - 250 mW
SOT323 - 200 mW
SOT416 - 150 mW
T
j
junction temperature - 150 C
T
amb
ambient temperature 65 +150 C
T
stg
storage temperature 65 +150 C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
SOT23 - - 500 K/W
SOT323 - - 625 K/W
SOT416 - - 833 K/W
BC846_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 9 — 25 September 2012 4 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
300 s; = 0.02.
[2] V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
[3] V
BE
decreases by approximately 2 mV/K with increasing temperature.
Table 8. Characteristics
T
amb
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
=30V; I
E
=0A - - 15 nA
V
CB
=30V; I
E
=0A;
T
j
= 150 C
--5A
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
= 0 A - - 100 nA
h
FE
DC current gain V
CE
=5V; I
C
=10A
h
FE
group A - 180 -
h
FE
group B - 290 -
DC current gain V
CE
=5V; I
C
=2mA 110 - 450
h
FE
group A 110 180 220
h
FE
group B 200 290 450
V
CEsat
collector-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA - 90 200 mV
I
C
=100mA; I
B
=5mA
[1]
- 200 400 mV
V
BEsat
base-emitter
saturation voltage
I
C
=10mA; I
B
=0.5mA
[2]
- 760 - mV
I
C
=100mA; I
B
=5mA
[2]
- 900 - mV
V
BE
base-emitter voltage I
C
=2mA; V
CE
=5V
[3]
580 660 700 mV
I
C
=10mA; V
CE
=5V
[3]
--770mV
f
T
transition frequency V
CE
=5V; I
C
=10mA;
f=100MHz
100--MHz
C
c
collector capacitance V
CB
=10V; I
E
=i
e
=0A;
f=1MHz
- 23pF
C
e
emitter capacitance V
EB
=0.5V; I
C
=i
c
=0A;
f=1MHz
-11-pF
NF noise figure I
C
=200A; V
CE
=5V;
R
S
=2 k; f = 1 kHz;
B=200Hz
-210dB
BC846_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 9 — 25 September 2012 5 of 15
NXP Semiconductors
BC846 series
65 V, 100 mA NPN general-purpose transistors
V
CE
=5V
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
V
CE
=5V
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
Fig 1. Selection A: DC current gain as a function of
collector current; typical values
Fig 2. Selection A: Base-emitter voltage as a function
of collector current; typical values
I
C
/I
B
=20
(1) T
amb
= 150 C
(2) T
amb
=25C
(3) T
amb
= 55 C
I
C
/I
B
=10
(1) T
amb
= 55 C
(2) T
amb
=25C
(3) T
amb
= 150 C
Fig 3. Selection A: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 4. Selection A: Base-emitter saturation voltage
as a function of collector current; typical
values
mgt723
10
−1
11010
2
10
3
I
C
(mA)
0
400
300
200
100
h
FE
(1)
(2)
(3)
mgt724
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BE
(mV)
(1)
(2)
(3)
10
3
10
2
10
mgt725
10
−1
11010
2
10
3
I
C
(mA)
V
CEsat
(mV)
(1)
(2)
(3)
mgt726
10
−1
11010
2
10
3
I
C
(mA)
0
1200
1000
800
600
400
200
V
BEsat
(mV)
(1)
(2)
(3)
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BC846B,215

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Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT NPN GP 100MA 65V
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