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V60120C-E3/4W

P1-P3P4-P5
V60120C, VB60120C
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
1
Document Number: 88976
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.41 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB package)
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 30 A
V
RRM
120 V
I
FSM
300 A
V
F
at I
F
= 30 A 0.71 V
T
J
max. 150 °C
Package TO-220AB, TO-263AB
Diode variations Dual common cathode
TO-220AB
1
2
3
TMBS
®
TO-263AB
1
2
K
V60120C VB60120C
PIN 1
PIN 2
K
HEATSINK
PIN 1
PIN 2
CASE
PIN 3
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60120C VB60120C UNIT
Maximum repetitive peak reverse voltage V
RRM
120 V
Maximum average forward rectified current (fig. 1)
per device
I
F(AV)
60
A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
300 A
Non-repetitive avalanche energy
at T
J
= 25 °C, L = 100 mH per diode
E
AS
260 mJ
Peak repetitive reverse current at t
p
= 2 μs, 1 kHz,
T
J
= 38 °C ± 2 °C per diode
I
RRM
0.5 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V60120C, VB60120C
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
2
Document Number: 88976
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Per Diode
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage I
R
= 1.0 mA T
A
= 25 °C V
BR
120 (minimum) - V
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.48 -
V
I
F
= 15 A 0.66 -
I
F
= 30 A 0.88 0.95
I
F
= 5 A
T
A
= 125 °C
0.41 -
I
F
= 15 A 0.58 -
I
F
= 30 A 0.71 0.75
Reverse current at rated V
R
per diode
V
R
= 90 V
T
A
= 25 °C
I
R
(2)
14 - μA
T
A
= 125 °C 11 - mA
V
R
= 120 V
T
A
= 25 °C 40 500 μA
T
A
= 125 °C 15 45 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V60120C VB60120C UNIT
Typical thermal resistance per diode R
JC
2.2 2.2 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V60120C-E3/4W 1.89 4W 50/tube Tube
TO-263AB VB60120C-E3/4W 1.38 4W 50/tube Tube
TO-263AB VB60120C-E3/8W 1.38 8W 800/reel Tape and reel
Average Forward Current (A)
Case Temperature (°C)
60
70
50
40
30
20
10
0
0 25 50 75 100 125 150
Resistive or Inductive Load
0
0 5 10 15 20 25 30 35
5
10
15
20
25
30
Average Power Loss (W)
Average Forward Current (A)
D = 1.0
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 0.2
D = t
p
/T t
p
T
V60120C, VB60120C
www.vishay.com
Vishay General Semiconductor
Revision: 10-May-16
3
Document Number: 88976
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 4 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Junction Capacitance Per Diode
Fig. 7 - Typical Transient Thermal Impedance Per Diode
0
50
100
150
200
250
300
350
1 10 100
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
max.
8.3 ms Single Half Sine-Wave
0.1
1
10
100
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
0.001
0.01
0.1
1
100
10
10 20 30 40 50 60 70 80 90 100
T
A
= 150 °C
T
A
= 125 °C
T
A
= 25 °C
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
100
1000
10 000
0.1 1 10 100
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
0.1
1
10
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
P1-P3P4-P5

V60120C-E3/4W

Mfr. #:
Buy V60120C-E3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 60 Amp 120 Volt Dual TrenchMOS
Lifecycle:
New from this manufacturer.
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