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IRFR4105ZTRPBF
P1-P3
P4-P6
P7-P9
P10-P11
IRFR/U4105ZPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rai
n-to-
Sour
ce Vol
tage (V
)
0
200
400
600
800
1000
1200
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
Coss
Crss
Ciss
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
0
5
10
15
20
25
30
Q
G
Tot
al G
ate C
harge (nC
)
0
4
8
12
16
20
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
VDS= 28
V
VDS= 11
V
I
D
= 18A
FOR TEST CIRCUIT
SEE FIG
UR
E 13
0.0
0.5
1.0
1.5
2.0
V
SD
, S
ource-t
oDrain V
olt
age (V
)
0.1
1.0
10.0
100.0
1000.0
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
1000
V
DS
, D
rai
n-toS
ource V
olt
age (V
)
0.1
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
Tc =
25°C
Tj
= 175°C
Si
ngle P
uls
e
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
IRFR/U4105ZPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Normalized On-Resistance
Vs. Temperature
25
50
75
100
125
150
175
T
J
, Junct
ion T
emperat
ure (
°C)
0
5
10
15
20
25
30
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion T
emperat
ure (
°C)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 18A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
t
1
, R
ectangul
ar Pul
se Durati
on (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
c
tor D = t1
/t2
2. P
eak Tj
= P
dm x Zt
hjc +
Tc
Ri (°C/W)
τ
i (sec)
1.100 0.000174
1.601 0.000552
0.418 0.007193
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRFR/U4105ZPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T
.
V
DS
I
D
I
G
3mA
V
GS
.3
µ
F
50K
Ω
.2
µ
F
12V
Current
Regulator
Same
T
ype
as
D.U.T
.
Current
Sampling
Resistors
+
-
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage Vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.
T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
25
50
75
100
125
150
175
St
art
ing T
J
, Junct
ion T
emperat
ure (
°C)
0
20
40
60
80
100
120
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TOP
2.0
A
3.5
A
BOTTOM
18A
-75
-50
-25
0
25
50
75
100
125
150
175
T
J
, T
emperat
ure (
°C )
2.0
2.5
3.0
3.5
4.0
4.5
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P11
IRFR4105ZTRPBF
Mfr. #:
Buy IRFR4105ZTRPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 55V 30A 24.5mOhm 18nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
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