OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BAT54C-E3-08

P1-P3P4-P4
BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-Mar-16
1
Document Number: 85508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes, Single and Dual
FEATURES
• These diodes feature very low turn-on voltage
and fast switching
• These devices are protected by a PN junction
guard ring against excessive voltage, such as
electrostatic discharges
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: SOT-23
Weight: approx. 8.8 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Note
(1)
Device on fiberglass substrate, see layout on next page
Top View
Top View
BAT54
BAT54C
BAT54A
BAT54S
1
3
1
3
1
3
1
2
2
2
2
3
PARTS TABLE
PART ORDERING CODE INTERNAL CONSTRUCTION TYPE MARKING REMARKS
BAT54
BAT54-E3-08 or BAT54-E3-18
Single diode L4
Tape and reel
BAT54-HE3-08 or BAT54-HE3-18
BAT54A
BAT54A-E3-08 or BAT54A-E3-18
Dual diodes common anode L42
BAT54A-HE3-08 or BAT54A-HE3-18
BAT54C
BAT54C-E3-08 or BAT54C-E3-18
Dual diodes common cathode L43
BAT54C-HE3-08 or BAT54C-HE3-18
BAT54S
BAT54S-E3-08 or BAT54S-E3-18
Dual diodes serial L44
BAT54S-HE3-08 or BAT54S-HE3-18
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
30 V
Forward continuous current
(1)
I
F
200 mA
Repetitive peak forward current
(1)
I
FRM
300 mA
Surge forward current
(1)
t
p
< 1 s I
FSM
600 mA
Power dissipation P
tot
230 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Device on fiberglass substrate,
see layout on next page
R
thJA
430 K/W
Junction temperature T
j
125 °C
Storage temperature range T
stg
-65 to +150 °C
Operating temperature range T
op
-55 to +125 °C
BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-Mar-16
2
Document Number: 85508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
LAYOUT FOR R
thJA
TEST
Thickness:
Fiberglas 15 mm (0.059")
Copper leads 0.3 mm (0.012")
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
Fig. 2 - Diode Capacitance vs. Reverse Voltage V
R
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Reserve breakdown voltage I
R
= 100 μA (pulsed) V
(BR)
30 V
Leakage current Pulsed test t
p
< 300 μs, <2 % at V
R
= 25 V I
R
2μA
Forward voltage
I
F
= 0.1 mA, t
p
< 300 μs, < 2 % V
F
240 mV
I
F
= 1 mA, t
p
< 300 μs, < 2 % V
F
320 mV
I
F
= 10 mA, t
p
< 300 μs, < 2 % V
F
400 mV
I
F
= 30 mA, t
p
< 300 μs, < 2 % V
F
500 mV
I
F
= 100 mA, t
p
< 300 μs, < 2 % V
F
800 mV
Diode capacitance V
R
= 1 V, f = 1 MHz C
D
10 pF
Reserve recovery time
I
F
= 10 mA to I
R
= 10 mA,
i
R
= 1 mA, R
L
= 100
t
rr
5ns
17451
15 (0.59)
12 (0.47)
0.8 (0.03)
5 (0.2)
7.5 (0.3)
3 (0.12)
1 (0.4)
1 (0.4)
2 (0.8)
2 (0.8)
1.5 (0.06)
5.1 (0.2)
18867
1000
100
10
1
0.1
0.01
I - Forward Current (mA)
F
0 0.4
0.6 1.2 1.4
0.8 10.2
V
F
- Forward Voltage (V)
= 125 °CT
j
25 °C
- 40 °C
18868
10
14
12
2
4
0
0 4 12 16 20 24 28
C - Typical Capacitance (pF)
D
V
R
- Reverse Voltage (V)
6
8
8
BAT54, BAT54A, BAT54C, BAT54S
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 16-Mar-16
3
Document Number: 85508
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Variation of Reverse Current
vs. Various Temperatures
PACKAGE DIMENSIONS in millimeters (inches): SOT-23
100
1000
10
1
0.1
0.01
510152002530
V
R
- Reverse Voltage (V)
I - Reverse Current (µA)
R
18869
= 125 °CT
j
100 °C
75 °C
50 °C
25 °C
Foot print recommendation:
Rev. 8 - Date: 23.Sept.2009
17418
Document no.: 6.541-5014.01-4
0.9 (0.035)
1 (0.039)
0.9 (0.035)
1 (0.039)
1.43 (0.056)
0.45 (0.018)
0.35 (0.014)
2.8 (0.110)
3.1 (0.122)
0.45 (0.018)
0.35 (0.014)
0.45 (0.018)
0.35 (0.014)
0.1 (0.004) max.
2.35 (0.093)
2.6 (0.102)
0.175 (0.007)
0.098 (0.004)
1.15 (0.045)
0.9 (0.035)
1.20 (0.047)
0.95 (0.037) 0.95 (0.037)
2 (0.079)
0.7 (0.028)
0.9 (0.035)
0° to 8°
0.2 (0.008)
0.3 (0.012)
0.5 (0.020)
0.550 ref. (0.022 ref.)
P1-P3P4-P4

BAT54C-E3-08

Mfr. #:
Buy BAT54C-E3-08
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 200mA 30 Volt
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet