IS31AP4088D
Integrated Silicon Solution, Inc. – www.issi.com
Rev. B, 01/03/2014
4
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V
CC
-0.3V ~ +6.0V
Voltage at any input pin
-0.3V ~ V
CC
+0.3V
Maximum junction temperature, T
JMAX
150°C
Storage temperature range, T
STG
-65°C ~ +150°C
Operating temperature range, T
A
−40°C ~ +85°C
ESD (HBM)
ESD (CDM)
1kV
1kV
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and
functional operation of the device at these or any other condition beyond those indicated in the operational sections of the specifications is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
The following specifications apply for V
CC
= 5V, unless otherwise noted. Limits apply for T
A
= 25°C.
Symbol Parameter Condition Min. Typ. Max. Unit
V
CC
Supply voltage 2.7 5.5 V
I
CC
Quiescent power supply
current
V
IN
= 0V, I
O
= 0A 4.5 10.5 mA
I
SD
Shutdown current GND applied to the shutdown pin 0.1 2.5 μA
V
IH
Shutdown input voltage high 1.4 V
V
IL
Shutdown input voltage low 0.4 V
t
WU
Turn on time C
Bypass
= 1μF 120 ms
ELECTRICAL CHARACTERISTICS OPERATION
The following specifications apply for V
CC
= 5V, unless otherwise noted. Limits apply for T
A
= 25°C.
Symbol Parameter Condition Min. Typ. Max. Unit
V
OS
Output offset voltage V
IN
= 0V 5 25 mV
P
O
Output power
THD+N = 1%, f = 1kHz, R
L
= 8Ω 1.15 1.3 W
THD+N = 10%, f = 1kHz, R
L
= 8Ω 1.45 1.6 W
THD+N = 1%, f = 1kHz, R
L
= 4Ω 1.95 2.1 W
THD+N = 10%, f = 1kHz, R
L
= 4Ω 2.45 2.6 W
THD+N
Total harmonic
distortion +noise
f = 1kHz, A
V
= 2, R
L
= 8Ω, P
O
= 1W 0.1 %
PSRR
Power supply
rejection ratio
Input floating, 217Hz, V
Ripple
= 200mV
p-p
C
Bypass
= 1μF, R
L
= 8Ω
80 dB
Input floating 1kHz, V
Ripple
= 200mV
p-p
C
Bypass
= 1μF, R
L
= 8Ω
70 dB
Input GND 217Hz, V
Ripple
= 200mV
p-p
C
Bypass
= 1μF, R
L
=8Ω
60 dB
Input GND 1kHz V
Ripple
= 200mV
p-p
C
Bypass
= 1μF, R
L
= 8Ω
60 dB
X
Talk
Channel separation f = 1kHz, C
Bypass
= 1μF -100 dB
V
NO
Output noise voltage 1kHz, A-weighted 7 μV
