IRSF3021LTR

Data Sheet No. PD 60068
-
I
Description
The IRSF3021 Lamp and DC motor driver is a fully protected
three terminal monolithic Smart Power MOSFET that fea-
tures current limiting, over-temperature protection, ESD
protection and over-voltage protection.
The on-chip protection circuit limits the drain current at 5.5A
(typical) in the on-state, when the load is short circuited. The
over-temperature circuitry turns off the Power MOSFET when
the junction temperature exceeds 165°C (typical). The device
restarts automatically once it has cooled down below the reset
temperature.
The IRSF3021 is specifically designed for driving loads that
require overload protection and in-rush current control while
operating in automotive and industrial environments. Tar-
geted applications include resistive loads such as lamps or
capacitive loads such as airbag squibs and DC motor drives.
FULLY PROTECTED POWER MOSFET SWITCH
Features
Controlled slew rate reduces EMI
Over temperature protection with auto-restart
Linear current-limit protection
Active drain-to-source clamp
ESD protection
Lead compatible with standard Power MOSFET
Low operating input current
Monolithic construction
Applications
Cabin Lighting
Airbag System
Programmable Logic Controller
DC Motor Drive
IRSF3021 (NOTE: For new designs, we
recommend IR’s new products IPS021 and IPS021L)
Product Summary
Source
SOURCE
V
ds(clamp)
50V
R
ds(on)
200m
I
lim
5.5A
T
j(sd)
165
o
C
E
AS
200mJ
Packages
3 Lead
TO220AB
3 Lead
SOT223
www.irf.com 1
Block Diagram
Drain
Input
DRAIN
INPUT
IRSF3021
2 www.irf.com
NOTES:
When mounted on a 1" square PCB (FR-4 or G10 material). For recommended footprint and soldering techniques,
refer to International Rectifier Application Note AN-994.
E
AS
is tested with a constant current source of 6A applied for 700µS with V
in
= 0V and starting T
j
= 25
o
C.
Input current must be limited to less than 5mA with a 1k resistor in series with the input when the Body-Drain Diode is
forward biased.
Symbol Parameter Min. Typ. Max. Units Test Conditions
R
thjc
Junction to case 4
o
C/W TO-220AB
R
thja
Junction to ambient 60
R
thjc
Junction to case 40
o
C/W SOT-223
R
thja
Junction to PCB ——60
Thermal Characteristics
Symbol Parameter Min. Typ. Max. Units Test Conditions
V
ds,clamp
Drain to source clamp voltage 50 56 65
V
I
ds
= 6A, t
p
= 700 µS
R
ds(on)
Drain to source on resistance 155 200 m V
in
= 5V, I
ds
= 2A
I
dss
Drain to source leakage current 250 µAV
ds
= 40V, V
in
= 0V
V
th
Input threshold voltage 1.0 2.0 3.0 V V
ds
= V
in
, I
ds
+ I
in
= 10mA
I
i,on
Input supply current (Normal Operation) 100 300 µAV
in
= 5V
I
i,off
Input supply current (Protection Mode) 250 500 µAV
in
= 5V
V
in, clamp
Input clamp voltage 9 10 I
in
= 1mA
V
sd
Body-drain diode forward drop 1.5 I
ds
= -2A, R
in
= 1k
Static Electrical Characteristics
(T
C
= 25
o
C unless otherwise specified.)
V
Absolute Maximum Ratings
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(T
C
= 25
o
C unless otherwise specified.)
Symbol Parameter Min. Max. Units Test Conditions
V
ds,
max
Continuous drain to source voltage 50
V
V
in,
max
Continuous input voltage -0.3 10
I
ds
Continuous drain current self limited A
P
d
Power dissipation 30 W T
c
25
o
C, TO220
—3WT
c
25
o
C, SOT223
E
AS
Unclamped single pulse inductive energyÁ 200 mJ
V
esd1
Electrostatic discharge voltage (Human Body Model) 4000
V
100pF, 1.5k
V
esd2
Electrostatic discharge voltage (Machine Model) 1000 200pF, 0
T
Jop
Operating junction temperature range -55
150
T
Stg
Storage temperature range -55 150
o
C
T
L
Lead temperature (soldering, 10 seconds) 300
IRSF3021
www.irf.com 3
Switching ElectricalCharacteristics
(V
CC
= 14V, resistive load (R
L
) = 10, R
in
= 100Ω. Specifications measured at T
C
= 25
o
C unless other-
wise specified.)
Symbol Parameter Min. Typ. Max. Units Test Conditions
t
don
Turn-on delay time 10 50 V
in
= 0V to 5V, 50% to 90%
t
r
Rise Time 30 80
µs
V
in
= 0V to 5V, 90% to 10%
t
doff
Turn-off delay time 20 60 V
in
= 5V to 0V, 50% to 10%
t
f
Fall time 15 50 V
in
= 5V to 0V, 10% to 90%
SR Output positive slew rate -4 4
V/µs
V
in
= 0V to 5V, +dV
ds/dt
SR Output negative slew rate -4 4 V
in
= 5V to 0V, -dV
ds/dt
Protection Characteristics
(T
C
= 25
o
C unless otherwise specified.
Symbol Parameter Min. Typ. Max. Units Test Conditions
I
ds(lim)
Current limit 3.0 5.5 8.0 A V
in
= 5V, V
ds
= 14V
T
j(sd)
Over temperature shutdown threshold 155 165
o
CV
in
= 5V, I
ds
= 2A
V
protect
Min. input voltage for over-temp function 3 V
t
Iresp
Current limit response time TBD µs
I
peak
Peak short circuit current 10 A
t
Tresp
Over-temperature response time TBD µs
Lead Assignments
Part Number
(2) D
1 2 3
In D S
3 Lead - SOT223
IRSF3021L
1 2 3
In D S
3 Lead - TO220
2 (D)
IRSF3021

IRSF3021LTR

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC DRIVER LO SIDE 50V 3A SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet