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MMBTA42LT3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 1994
October, 2016 − Rev. 13
1 Publication Order Number:
MMBTA42LT1/D
MMBTA42L, SMMBTA42L,
MMBTA43L
High Voltage Transistors
NPN Silicon
Features
• S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Characteristic Symbol Value Unit
Collector−Emitter Voltage
MMBTA42, SMMBTA42
MMBTA43
V
CEO
300
200
Vdc
Collector−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
V
CBO
300
200
Vdc
Emitter−Base Voltage
MMBTA42, SMMBTA42
MMBTA43
V
EBO
6.0
6.0
Vdc
Collector Current − Continuous I
C
500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
225
1.8
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
556 °C/W
Total Device Dissipation Alumina
Substrate (Note 2) T
A
= 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
Thermal Resistance, Junction−to−Ambient
R
q
JA
417 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
SOT−23 (TO−236)
CASE 318
STYLE 6
2
3
1
www.onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
1D M G
G
1D = MMBTA42LT, SMMBTA42L
M1E = MMBTA43LT
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAMS
1
M1E M G
G
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 3)
(I
C
= 1.0 mAdc, I
B
= 0) MMBTA42, SMMBTA42
MMBTA43
V
(BR)CEO
300
200
−
−
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0) MMBTA42, SMMBTA42
MMBTA43
V
(BR)CBO
300
200
−
−
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 100 mAdc, I
C
= 0)
V
(BR)EBO
6.0 − Vdc
Collector Cutoff Current
(V
CB
= 200 Vdc, I
E
= 0) MMBTA42, SMMBTA42
(V
CB
= 160 Vdc, I
E
= 0) MMBTA43
I
CBO
−
−
0.1
0.1
mAdc
Emitter Cutoff Current
(V
EB
= 6.0 Vdc, I
C
= 0) MMBTA42, SMMBTA42
(V
EB
= 4.0 Vdc, I
C
= 0) MMBTA43
I
EBO
−
−
0.1
0.1
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 10 Vdc) Both Types
(I
C
= 10 mAdc, V
CE
= 10 Vdc) Both Types
(I
C
= 30 mAdc, V
CE
= 10 Vdc) MMBTA42, SMMBTA42
MMBTA43
h
FE
25
40
40
40
−
−
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc) MMBTA42, SMMBTA42
MMBTA43
V
CE(sat)
−
−
0.5
0.5
Vdc
Base−Emitter Saturation Voltage
(I
C
= 20 mAdc, I
B
= 2.0 mAdc)
V
BE(sat)
− 0.9 Vdc
SMALL− SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 20 Vdc, f = 100 MHz)
f
T
50 − MHz
Collector−Base Capacitance
(V
CB
= 20 Vdc, I
E
= 0, f = 1.0 MHz) MMBTA42, SMMBTA42
MMBTA43
C
cb
−
−
3.0
4.0
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
MMBTA42L, SMMBTA42L, MMBTA43L
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
10010.1
10
100
h
FE
, DC CURRENT GAIN
1000
10
Figure 2. Collector−Emitter Saturation Voltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (mA)
101
0.0
0.4
0.8
1.2
100
Figure 3. Base−Emitter Saturation Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
10010.1
0
0.2
0.8
1.0
10
Figure 4. Base−Emitter On Voltage vs.
Collector Current
I
C
, COLLECTOR CURRENT (mA)
Figure 5. Base−Emitter Temperature
Coefficient
I
C
, COLLECTOR CURRENT (mA)
Figure 6. Capacitance
V
R
, REVERSE VOLTAGE (VOLTS)
100
0
100.1
0.1
1
10
C, CAPACITANCE (pF)
100
100
T
J
= 150°C
V
CE
= 10 V
25°C
−55°C
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.1
0.6
1.0
0.2
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
I
C
/I
B
= 10
150°C
25°C
−55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
V
BE(on)
, BASE−EMITTER VOLTAGE (V)
10010.1
0
0.2
0.8
1.0
10
I
C
/I
B
= 10
150°C
25°C
−55°C
0.6
0.4
0.1
0.7
0.9
0.5
0.3
10010.1
−2.8
−2.0
10
q
VB
, TEMPERATURE COEFFICIENT (mV/°C)
V
CE
= 10 V
−55°C to 150°C
−0.4
−1.2
−2.4
0
−0.8
−1.6
q
VB
, for V
BE
T
J
= 25°C
f = 1 MHz
C
ibo
C
obo
1
P1-P3P4-P5

MMBTA42LT3

Mfr. #:
Buy MMBTA42LT3
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 300V 0.5A SOT-23
Lifecycle:
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