NTHD3133PFT3G Datasheet NTHD3133PFT1G, NTHD3133PFT3G | P1-P3

© Semiconductor Components Industries, LLC, 2007

October, 2007 - Rev. 0

1 Publication Order Number:

NTHD3133PF/D

NTHD3133PF

Power MOSFET and

Schottky Diode

-20 V, FETKYt, P-Channel, -4.4 A, with

3.7 A Schottky Barrier Diode, ChipFETt

Features

•Leadless SMD Package Featuring a MOSFET and Schottky Diode

•40% Smaller than TSOP-6 Package

•Leadless SMD Package Provides Great Thermal Characteristics

•Independent Pinout to each Device to Ease Circuit Design

•Trench P-Channel for Low On Resistance

•Ultra Low V

F

Schottky

•These are Pb-Free Devices

Applications

•Li-Ion Battery Charging

•High Side DC-DC Conversion Circuits

•High Side Drive for Small Brushless DC Motors

•Power Management in Portable, Battery Powered Products

MOSFET MAXIMUM RATINGS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Units

Drain-to-Source Voltage V

DSS

-20 V

Gate-to-Source Voltage V

GS

±8.0 V

Continuous Drain

Current (Note 1)

Steady

State

T

J

= 25°C

I

D

-3.2

A

T

J

= 85°C -2.3

t ≤ 5 s T

J

= 25°C -4.4

Power Dissipation

(Note 1)

Steady

State

T

J

= 25°C

P

D

1.1

W

t ≤ 5 s 2.1

Pulsed Drain Current

t

p

= 10 ms

I

DM

-13 A

Operating Junction and Storage Temperature T

J

, T

STG

-55 to

150

°C

Source Current (Body Diode) I

S

2.5 A

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

T

L

260 °C

SCHOTTKY DIODE MAXIMUM RATINGS

(T

J

= 25°C unless otherwise noted)

Parameter

Symbol Value Units

Peak Repetitive Reverse Voltage V

RRM

20 V

DC Blocking Voltage V

R

20 V

Average Rectified

Forward Current

Steady

State

T

J

= 25°C

I

F

2.2 V

t ≤ 5 s 3.7 A

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq

[1 oz] including traces).

http://onsemi.com

G

D

P-Channel MOSFET

S

C

A

Schottky Diode

-20 V

20 V

85 mW @ -2.5 V

64 mW @ -4.5 V

3.7 A

R

DS(on)

TYP

-4.4 A

0.35 V

I

D

MAXV

(BR)DSS

MOSFET

SCHOTTKY DIODE

V

R

MAX I

F

MAXV

F

TYP

ChipFET

CASE 1206A

STYLE 3

1

8

CONNECTIONS

MARKING

DIAGRAM

1

2

3

4

8

7

6

5

8

7

6

54

3

2

1

C

D

A

S

G

DA M

G

DA = Specific Device Code

M = Month Code

G = Pb-Free Package

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

NTHD3133PF

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2

THERMAL RESISTANCE RATINGS

Parameter Symbol Max Units

Junction-to-Ambient – Steady State (Note 2)

R

q

JA

113 °C/W

Junction-to-Ambient – t ≤ 10 s (Note 2)

R

q

JA

60 °C/W

2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).

MOSFET ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Test Conditions Min Typ Max Units

OFF CHARACTERISTICS

Drain-to-Source Breakdown Voltage

V

(BR)DSS

V

GS

= 0 V, I

D

= -250 mA

-20 V

Drain-to-Source Breakdown Voltage

Temperature Coefficient

V

(BR)DSS

/T

J

-15 mV/°C

Zero Gate Voltage Drain Current I

DSS

V

DS

= -16 V,

V

GS

= 0 V

T

J

= 25°C -1.0

mA

T

J

= 125°C -5.0

Gate-to-Source Leakage Current I

GSS

V

DS

= 0 V, V

GS

= ±8.0 V ±100 nA

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

GS(TH)

V

GS

= V

DS

, I

D

= -250 mA

-0.45 -1.5 V

Gate Threshold Temperature Coefficient V

GS(TH)

/T

J

2.7 mV/°C

Drain-to-Source On-Resistance R

DS(on)

V

GS

= -4.5, I

D

= -3.2 A 64 80

mW

V

GS

= -2.5, I

D

= -2.2 A 85 110

V

GS

= -1.8, I

D

= -1.0 A 120 170

Forward Transconductance g

FS

V

DS

= -10 V, I

D

= -2.9 A 8.0 S

CHARGES AND CAPACITANCES

Input Capacitance

C

ISS

V

GS

= 0 V, f = 1.0 MHz,

V

DS

= -10 V

680

pF

Output Capacitance C

OSS

100

Reverse Transfer Capacitance C

RSS

70

Total Gate Charge Q

G(TOT)

V

GS

= -4.5 V, V

DS

= -10 V,

I

D

= -3.2 A

7.4

nC

Threshold Gate Charge Q

G(TH)

0.6

Gate-to-Source Charge Q

GS

1.4

Gate-to-Drain Charge Q

GD

2.5

SWITCHING CHARACTERISTICS (Note 4)

Turn-On Delay Time

t

d(ON)

V

GS

= -4.5 V, V

DD

= -10 V,

I

D

= -3.2 A, R

G

= 2.4 W

5.8

ns

Rise Time t

r

11.7

Turn-Off Delay Time t

d(OFF)

16

Fall Time t

f

12.4

DRAIN-SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

V

SD

V

GS

= 0 V, I

S

= -2.5 A T

J

= 25°C -0.8 -1.2 V

Reverse Recovery Time t

RR

V

GS

= 0 V, I

S

= -1.0 A ,

dI

S

/dt = 100 A/ms

13.5

ns

Charge Time t

a

9.5

Discharge Time t

b

4.0

Reverse Recovery Charge Q

RR

6.5 nC

SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T

J

= 25°C unless otherwise noted)

Parameter

Symbol Test Conditions Min Typ Max Units

Maximum Instantaneous

Forward Voltage

V

F

I

F

= 0.1 A 0.31

V

I

F

= 1.0 A 0.365

Maximum Instantaneous

Reverse Current

I

R

V

R

= 10 V 0.75

mA

V

R

= 20 V 2.5

Non-Repetitive Peak Surge Current I

FSM

Halfwave, Single Pulse 60 Hz 23 A

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

4. Switching characteristics are independent of operating junction temperatures.

NTHD3133PF

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3

TYPICAL P-CHANNEL PERFORMANCE CURVES

(T

J

= 25°C unless otherwise noted)

-2 V

100°C

0

4

5

3

632

-V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

-I

D,

DRAIN CURRENT (AMPS)

2

1

0

1

Figure 1. On-Region Characteristics

0.5

4

21.5 2.5

3

2

1

0

3

Figure 2. Transfer Characteristics

-V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

Figure 3. On-Resistance vs. Gate-to-Source

Voltage

-I

D,

DRAIN CURRENT (AMPS)

Figure 4. On-Resistance vs. Drain Current and

Gate Voltage

-50 0-25 25

1.3

1.2

1

0.8

0.7

50 125100

Figure 5. On-Resistance Variation with

Temperature

-T

J

, JUNCTION TEMPERATURE (°C)

T

J

= 25°C

T

C

= -55°C

75 150

I

D

= -3.2 A

V

GS

= -4.5 V

R

DS(on),

DRAIN-TO-SOURCE

RESISTANCE (NORMALIZED)

4

25°C

1.4

-2.2 V

24 8

10

2016

Figure 6. Drain-to-Source Leakage Current

vs. Voltage

-V

DS

, DRAIN-TO-SOURCE VOLTAGE (VOLTS)

12

V

GS

= 0 V

-I

DSS

, LEAKAGE (A)

T

J

= 100°C

-1.4 V

-1.6 V

-1.8 V

100

1000

78

-2.6 V

V

DS

≥ -10 V

610 1814

V

GS

= -3 V

V

GS

= -5 V to -3.6 V

1.1

0.9

5

6

7

8

9

910

-2.4 V

9

8

7

6

5

0 3.5

0.1

35

0.2

0.05

-V

GS

, GATE-TO-SOURCE VOLTAGE (VOLTS)

R

DS(on),

DRAIN-TO-SOURCE RESISTANCE (W)

-I

D,

DRAIN CURRENT (AMPS)

24

I

D

= -3.2 A

T

J

= 25°C

R

DS(on),

DRAIN-TO-SOURCE RESISTANCE (W)

16

2345

T

J

= 25°C

V

GS

= -4.5 V

V

GS

= -2.5 V

0.15

678

0.125

0.075

0.175

0.1

0.2

0.05

0.15

0.125

0.075

0.175

NTHD3133PFT3G

NTHD3133PFT3G

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