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IRFS33N15DTRLP
P1-P3
P4-P6
P7-P9
P10-P12
IRFB/IRFS/IRFSL33N15D
www.irf.com
7
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple
≤
5%
Body Diode
Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T
. I
SD
Waveform
D.U.T
. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
+
-
+
+
+
-
-
-
Fig 14.
For N-Channel HEXFET
®
Power MOSFETs
*
V
GS
= 5V for Logic Level Devices
Peak Diode Recovery dv/dt Test Circuit
R
G
V
DD
•
dv/dt controlled by R
G
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor "D"
•
D.U.T. - Device Under Test
D.U.T
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
*
IRFB/IRFS/IRFSL33N15D
8
www.irf.com
L
E
AD AS
SI
GNME
NT
S
1
-
G
A
T
E
2
-
D
R
A
IN
3
-
S
O
U
R
C
E
4
-
D
R
A
IN
- B
-
1.
3
2 (
.
05
2)
1.
2
2 (
.
04
8)
3X
0.
55
(
.
02
2)
0.
46
(
.
01
8)
2.
9
2 (.
115)
2.
6
4 (.
104)
4
.
69
(.
18
5)
4
.
20
(.
16
5)
3X
0.
93 (.
0
37)
0.
69 (.
0
27)
4.
06 (.
160)
3.
55 (.
140)
1.
15
(
.
04
5)
M
IN
6
.
47 (
.
255
)
6
.
10 (
.
240
)
3.
78 (.
149)
3.
54 (.
139)
- A
-
10.
54
(.
415)
10.
29
(.
405)
2.
87 (.
1
13)
2.
62 (.
1
03)
15
.
24
(
.
60
0)
14
.
84
(
.
58
4)
1
4.
09 (.
5
55)
1
3.
47 (.
5
30)
3X
1
.
40 (.
05
5)
1
.
15 (.
04
5)
2
.
54
(
.
10
0)
2X
0
.3
6 (
.0
1
4
)
M
B
A
M
4
1
2 3
NOT
ES
:
1
D
I
ME
NS
I
O
NI
N
G
&
TO
LE
R
A
NC
I
N
G P
ER
AN
S
I
Y14
.
5M
,
1
982.
3 O
U
TL
I
N
E
C
ON
FO
R
M
S
TO
J
ED
EC
OU
T
LI
N
E
T
O
-220A
B.
2
C
O
N
TR
O
L
L
I
N
G
D
I
M
E
N
S
I
O
N
: IN
C
H
4
H
E
A
T
S
I
N
K
&
L
E
A
D
M
E
A
S
U
R
E
M
E
N
T
S
D
O
N
OT
I
NCL
UD
E B
URRS.
TO-220AB Part Marking Information
T
O-220AB Package Outline
Dimensions are shown in millimeters (inches)
PART
NU
M
BER
INT
E
R
N
A
T
ION
A
L
RE
CT
I
FI
ER
L
O
G
O
E
XAM
PL
E :
THIS I
S
A
N
I
R
F1010
W
I
T
H
A
S
S
E
M
B
L
Y
L
O
T
C
O
D
E
9
B
1
M
ASSEM
BLY
L
O
T
C
O
D
E
D
AT
E CO
DE
(
Y
Y
WW)
YY = YEA
R
W
W
=
W
E
E
K
9246
I
RF1010
9B
1M
A
IRFB/IRFS/IRFSL33N15D
www.irf.com
9
D
2
Pak Package Outline
D
2
Pak Part Marking Information
10
.
16 (
.
400)
R
E
F
.
6.47 (
.2
55)
6.18 (
.2
43)
2.61 (.
1
03
)
2.32 (.
0
91
)
8
.
89 (
.
350)
R
E
F
.
- B
-
1.32 (.052)
1.22 (.048)
2.79 (.110)
2.29 (.090)
1
.
39 (
.
055)
1
.
14 (
.
045)
5
.
28 (.208)
4
.
78 (.188)
4.69 (
.1
85)
4.20 (
.1
65)
10
.
54 (
.
415
)
10
.
29 (
.
405
)
- A -
2
1
3
15
.
49 (.610)
14
.
73 (.580)
3X
0.
9
3 (
.
0
37)
0.
6
9 (
.
0
27)
5
.
08 (.200)
3X
1.40 (
.0
55)
1.14 (
.0
45)
1.78 (.070)
1.27 (.050)
1.40 (.055)
M
A
X
.
NO
TE
S:
1 DI
MENSI
ONS
AFTE
R SOL
DER DI
P
.
2 DI
MENSI
ONI
NG
& TOL
ER
ANCI
NG PER
ANS
I
Y
14
.
5
M
,
1
9
82
.
3 CONT
RO
LLI
NG
DI
M
ENS
I
ON
:
I
NCH.
4 HEA
TSI
NK &
LEAD
DI
MENSI
ONS DO
NOT
I
NCL
UDE BU
RRS.
0.55 (.022)
0.46 (.018)
0
.2
5
(.0
1
0
) M
B
A
M
MI
NI
MUM REC
OM
MEN
DED FOOT
PRI
NT
11
.
43 (
.
450)
8.89 (.
3
50
)
17
.
78 (.700)
3.
81 (
.
1
50)
2
.
08
(.082)
2X
L
EAD
ASSI
GN
MENT
S
1
- G
A
T
E
2
- D
R
A
IN
3
- S
O
U
R
C
E
2.54 (.100)
2
X
PAR
T
N
UM
B
ER
I
NT
ERN
AT
I
O
NAL
RE
CTI
FI
E
R
L
O
G
O
D
AT
E
CO
DE
(Y
Y
W W )
Y
Y =
YEAR
WW
=
WE
E
K
A
S
SEM
BLY
L
O
T
C
O
D
E
F530
S
9
B
1
M
92
46
A
P1-P3
P4-P6
P7-P9
P10-P12
IRFS33N15DTRLP
Mfr. #:
Buy IRFS33N15DTRLP
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 150V 33A 56mOhm 60nC
Lifecycle:
New from this manufacturer.
Delivery:
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EMS
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