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PMBT2222,235

P1-P3P4-P6P7-P9P10-P12P13-P13
PMBT2222_PMBT2222A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 12 November 2010 3 of 12
NXP Semiconductors
PMBT2222; PMBT2222A
NPN switching transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter
PMBT2222 - 60 V
PMBT2222A - 75 V
V
CEO
collector-emitter voltage open base
PMBT2222 - 30 V
PMBT2222A - 40 V
V
EBO
emitter-base voltage open collector
PMBT2222 - 5 V
PMBT2222A - 6 V
I
C
collector current - 600 mA
I
CM
peak collector current - 800 mA
I
BM
peak base current - 200 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-250mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
--500K/W
PMBT2222_PMBT2222A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 12 November 2010 4 of 12
NXP Semiconductors
PMBT2222; PMBT2222A
NPN switching transistors
7. Characteristics
Table 8. Characteristics
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
PMBT2222 V
CB
=50V; I
E
=0A - - 10 nA
V
CB
=50V; I
E
=0A;
T
j
= 125 °C
--10μA
collector-base cut-off
current
PMBT2222A V
CB
=60V; I
E
=0A - - 10 nA
V
CB
=60V; I
E
=0A;
T
j
= 125 °C
--10μA
I
EBO
emitter-base cut-off
current
V
EB
=5V; I
C
=0A - - 10 nA
h
FE
DC current gain V
CE
=10V;
I
C
=0.1mA
35
V
CE
=10V;
I
C
=1mA
50 - -
V
CE
=10V;
I
C
=10mA
75 - -
V
CE
=10V;
I
C
=10mA;
T
amb
= −55 °C
35 - -
V
CE
=10V;
I
C
= 150 mA
[1]
100 - 300
V
CE
=1V;
I
C
= 150 mA
[1]
50 - -
DC current gain V
CE
=10V;
I
C
= 500 mA
[1]
PMBT2222 30 - -
PMBT2222A 40 - -
V
CEsat
collector-emitter
saturation voltage
I
C
= 150 mA;
I
B
=15mA
[1]
PMBT2222 - - 400 mV
PMBT2222A - - 300 mV
collector-emitter
saturation voltage
I
C
= 500 mA;
I
B
=50mA
[1]
PMBT2222 - - 1.6 V
PMBT2222A - - 1 V
PMBT2222_PMBT2222A All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 6 — 12 November 2010 5 of 12
NXP Semiconductors
PMBT2222; PMBT2222A
NPN switching transistors
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
V
BEsat
base-emitter saturation
voltage
I
C
= 150 mA;
I
B
=15mA
[1]
PMBT2222 - - 1.3 V
PMBT2222A 0.6 - 1.2 V
base-emitter saturation
voltage
I
C
= 500 mA;
I
B
=50mA
[1]
PMBT2222 - - 2.6 V
PMBT2222A - - 2 V
C
c
collector capacitance V
CB
=10V;
I
E
=i
e
=0A;
f=1MHz
--8pF
C
e
emitter capacitance V
EB
=500mV;
I
C
=i
c
=0A;
f=1MHz
PMBT2222 - - 30 pF
PMBT2222A - - 25 pF
f
T
transition frequency V
CE
=20V;
I
C
=20mA;
f = 100 MHz
PMBT2222 250 - - MHz
PMBT2222A 300 - - MHz
NF noise figure V
CE
=5V;
I
C
= 100 μA;
R
S
=1kΩ;
f=1kHz
--4dB
t
d
delay time V
CC
=10V;
I
C
= 150 mA;
I
Bon
=15mA;
I
Boff
= −15 mA
--15ns
t
r
rise time - - 20 ns
t
on
turn-on time - - 35 ns
t
s
storage time - - 200 ns
t
f
fall time - - 60 ns
t
off
turn-off time - - 250 ns
Table 8. Characteristics
…continued
T
j
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
P1-P3P4-P6P7-P9P10-P12P13-P13

PMBT2222,235

Mfr. #:
Buy PMBT2222,235
Manufacturer:
Nexperia
Description:
Bipolar Transistors - BJT TRANS SW TAPE-11
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