AUIRFR4105

P1-P3 P4-P6 P7-P9 P10-P10

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AUIRFR4105

4 2015-12-1

Fig 5. Typical Capacitance vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs.

Gate-to-Source Voltage



Fig 8. Maximum Safe Operating Area

Fig. 7 Typical Source-to-Drain Diode

Forward Voltage

0

200

400

600

800

1000

1200

110100

C, Capacitance (pF)

DS

V , Drain-to-Source Voltage (V)

A

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

4

8

12

16

20

010203040

Q , Total Gate Charge (nC)

G

V , Gate-to-Source Voltage (V)

GS

A

FOR TEST CIRCUIT

SEE FIGURE 13

V = 44V

V = 28V

DS

DS

I = 16A

D

1

10

100

1000

0.4 0.8 1.2 1.6 2.0

T = 25°C

J

V = 0V

GS

V , Source-to-Drain Voltage (V)

I , Reverse Drain Current (A)

SD

SD

A

T = 175°C

J

1

10

100

1000

110100

V , Drain-to-Source Voltage (V)

DS

I , Drain Current (A)

OPERATION IN THIS AREA LIMITED

BY R

D

DS(on)

10µs

100µs

1ms

A

T = 25°C

T = 175°C

Single Pulse

C

J

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AUIRFR4105

5 2015-12-1

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current Vs.

Case Temperature

25 50 75 100 125 150 175

0

5

10

15

20

25

30

T , Case Temperature ( C)

I , Drain Current (A)

°

C

D

LIMITED BY PACKAGE

0.01

0.1

1

10

0.00001 0.0001 0.001 0.01 0.1

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJC

0.01

0.02

0.05

0.10

0.20

D = 0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10a. Switching Time Test Circuit

Fig 10b. Switching Time Waveforms

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AUIRFR4105

6 2015-12-1



Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12a. Unclamped Inductive Test Circuit

Fig 12b. Unclamped Inductive Waveforms

R

G

I

AS

0.01



t

p

D.U.T

L

V

DS

+

-

V

DD

DRIVER

A

15V

20V

t

p

V

(BR)DSS

I

AS

Fig 13b. Gate Charge Test Circuit

Fig 13a. Gate Charge Waveform

Vds

Vgs

Id

Vgs(th)

Qgs1

Qgs2 Qgd Qgodr

0

20

40

60

80

100

120

140

25 50 75 100 125 150 175

J

E , Single Pulse Avalanche Energy (mJ)

AS

A

Starting T , Junction Temperature (°C)

V = 25V

DD

I

TOP 6.5A

11A

BOTTOM 16A

D

P1-P3 P4-P6 P7-P9 P10-P10

AUIRFR4105

Mfr. #:

Manufacturer:

Infineon Technologies

Description:

MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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Products related to this Datasheet

AUIRFR4105