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BC182A

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2005
September, 2005 − Rev. 4
1 Publication Order Number:
BC182/D
BC182, BC182A, BC182B
Amplifier Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol BC182 Unit
Collector−Emitter Voltage V
CEO
50 Vdc
Collector−Base Voltage V
CBO
60 Vdc
Emitter−Base Voltage V
EBO
6.0 Vdc
Collector Current − Continuous I
C
100 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
350
2.8
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient
R
q
JA
357 °C/W
Thermal Resistance,
Junction−to−Case
R
q
JC
125 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3
2
1
http://onsemi.com
TO−92
CASE 29
STYLE 17
MARKING
DIAGRAM
COLLECTOR
1
2
BASE
3
EMITTER
Device Package Shipping
†
ORDERING INFORMATION
BC182 TO−92 5000 Units / Box
BC182G TO−92
(Pb−Free)
5000 Units / Box
BC182A TO−92 5000 Units / Box
BC182B TO−92 5000 Units / Box
BC182BRL1 TO−92 2000 / Tape & Reel
BC
182x
AYWWG
G
BC182x = Device Code
x = A or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
BC182AG TO−92
(Pb−Free)
5000 Units / Box
BC182BG TO−92
(Pb−Free)
5000 Units / Box
BC182BRL1G TO−92
(Pb−Free)
2000 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BC182, BC182A, BC182B
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
V
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
60 − −
V
Emitter−Base Breakdown Voltage
(I
E
= 100 mA, I
C
= 0)
V
(BR)EBO
6.0 − −
V
Collector Cutoff Current
(V
CB
= 50 V, V
BE
= 0)
I
CBO
− 0.2 15
nA
Emitter−Base Leakage Current
(V
EB
= 4.0 V, I
C
= 0)
I
EBO
− − 15
nA
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V) BC182
(I
C
= 2.0 mA, V
CE
= 5.0 V) BC182
BC182A
BC182B
(I
C
= 100 mA, V
CE
= 5.0 V) BC182
h
FE
40
120
120
180
80
−
−
−
−
500
220
500
−
−
Collector−Emitter On Voltage
(I
C
= 10 mA, I
B
= 0.5 mA)
(I
C
= 100 mA, I
B
= 5.0 mA) (Note 1)
V
CE(sat)
−
−
0.07
0.2
0.25
0.6
V
Base−Emitter Saturation Voltage
(I
C
= 100 mA, I
B
= 5.0 mA) (Note 1)
V
BE(sat)
− − 1.2 V
Base−Emitter On Voltage
(I
C
= 100 mA, V
CE
= 5.0 V)
(I
C
= 2.0 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V) (Note 1)
V
BE(on)
−
0.55
−
0.5
0.62
0.83
−
0.7
−
V
DYNAMIC CHARACTERISTICS
Current−Gain — Bandwidth Product
(I
C
= 0.5 mA, V
CE
= 3.0 V, f = 100 MHz)
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
f
T
−
150
100
200
−
−
MHz
Common Base Output Capacitance
(V
CB
= 10 V, I
C
= 0, f = 1.0 MHz)
C
ob
− − 5.0 pF
Common Base Input Capacitance
(V
EB
= 0.5 V, I
C
= 0, f = 1.0 MHz)
C
ib
− 8.0 − pF
Small−Signal Current Gain
(I
C
= 2.0 mA, V
CE
= 5.0 V, f = 1.0 kHz) BC182
BC182A
BC182B
h
fe
125
125
240
−
−
−
500
260
500
−
Noise Figure
(I
C
= 0.2 mA, V
CE
= 5.0 V, R
S
= 2.0 kW, f = 1.0 kHz)
NF
− 2.0 10
dB
1. Pulse Test: Tp 300 s, Duty Cycle 2.0%.
BC182, BC182A, BC182B
http://onsemi.com
3
2.0
1.5
1.0
0.2
0.3
0.4
0.6
0.8
2000.2 0.5 1.0 2.0 5.0 10 20 50 100
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
h
FE
, NORMALIZED DC CURRENT GAIN
V
CE
= 10 V
T
A
= 25°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.20.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 10
0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 1. “Saturation” and “On” Voltages
V, VOLTAGE (VOLTS)
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
V
CE(sat)
@ I
C
/I
B
= 10
400
20
30
40
60
80
100
200
300
0.5 1.00.7 2.0 3.0 5.0 7.0 10 20 30 50
I
C
, COLLECTOR CURRENT (mAdc)
Figure 2. Current−Gain — Bandwidth Product
f
T
, CURRENT−GAIN  BANDWIDTH PRODUCT (MHz)
C, CAPACITANCE (pF)
10
1.0
2.0
3.0
5.0
7.0
0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 3. Capacitances
V
CE
= 10 V
T
A
= 25°C
T
A
= 25°C
C
ib
C
ob
r
b
, BASE SPREADING RESISTANCE (OHMS)
170
160
150
140
130
120
100.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0
I
C
, COLLECTOR CURRENT (mAdc)
Figure 4. Base Spreading Resistance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
P1-P3P4-P4

BC182A

Mfr. #:
Buy BC182A
Manufacturer:
ON Semiconductor
Description:
TRANS NPN 50V 0.1A TO-92
Lifecycle:
New from this manufacturer.
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