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1SMB100AT3

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2009
October, 2009 − Rev. 11
1 Publication Order Number:
1SMB5.0AT3/D
1SMB5.0AT3 Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional*
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict package and is ideally suited for use in communication
systems, automotive, numerical controls, process controls, medical
equipment, business machines, power supplies and many other
industrial/consumer applications.
Features
• Working Peak Reverse Voltage Range − 5.0 V to 170 V
• Standard Zener Breakdown Voltage Range − 6.7 V to 199 V
• Peak Power − 600 W @ 1.0 ms
• ESD Rating of Class 3 (>16 kV) per Human Body Model
• Maximum Clamp Voltage @ Peak Pulse Current
• Low Leakage < 5.0 mA Above 10 V
• UL 497B for Isolated Loop Circuit Protection
• Response Time is Typically < 1.0 ns
• Pb−Free Packages are Available
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260°C for 10 Seconds
LEADS: Modified L−Bend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V − 170 V,
600 W PEAK POWER
Device Package Shipping
†
ORDERING INFORMATION
1SMBxxxAT3 SMB 2500/Tape & Reel
SMB
CASE 403A
PLASTIC
Cathode Anode
http://onsemi.com
1SMBxxxAT3G SMB
(Pb−Free)
2500/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
A = Assembly Location
Y = Year
WW = Work Week
xx = Device Code (Refer to page 3)
G = Pb−Free Package
MARKING DIAGRAM
AYWW
xx G
G
(Note: Microdot may be in either location)
Uni−Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMB5.0AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25°C, Pulse Width = 1 ms P
PK
600 W
DC Power Dissipation @ T
L
= 75°C
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance from Junction−to−Lead
P
D
R
q
JL
3.0
40
25
W
mW/°C
°C/W
DC Power Dissipation (Note 3) @ T
A
= 25°C
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
P
D
R
q
JA
0.55
4.4
226
W
mW/°C
°C/W
Forward Surge Current (Note 4) @ T
A
= 25°C I
FSM
100 A
Operating and Storage Temperature Range T
J
, T
stg
−65 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
non−repetitive duty cycle.
1SMB5.0AT3 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.)
Device*
Device
Marking
V
RWM
(Note 6)
I
R
@ V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 8)
C
typ
(Note 9)
V
BR
(Note 7) Volts @ I
T
V
C
I
PP
V
mA
Min Nom Max mA
V A pF
1SMB5.0AT3, G
1SMB6.0AT3, G
1SMB6.5AT3, G
1SMB7.0AT3, G
KE
KG
KK
KM
5.0
6.0
6.5
7.0
800
800
500
500
6.40
6.67
7.22
7.78
6.7
7.02
7.6
8.19
7.0
7.37
7.98
8.6
10
10
10
10
9.2
10.3
11.2
12.0
65.2
58.3
53.6
50.0
2700
2300
2140
2005
1SMB7.5AT3, G
1SMB8.0AT3, G
1SMB8.5AT3, G
1SMB9.0AT3, G
KP
KR
KT
KV
7.5
8.0
8.5
9.0
100
50
10
5.0
8.33
8.89
9.44
10.0
8.77
9.36
9.92
10.55
9.21
9.83
10.4
11.1
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
46.5
44.1
41.7
39.0
1890
1780
1690
1605
1SMB10AT3, G
1SMB11AT3, G
1SMB12AT3, G
1SMB13AT3, G
KX
KZ
LE
LG
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.7
12.85
14
15.15
12.3
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1460
1345
1245
1160
1SMB14AT3, G
1SMB15AT3, G
1SMB16AT3, G
1SMB17AT3, G
LK
LM
LP
LR
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1085
1020
965
915
1SMB18AT3, G
1SMB20AT3, G
1SMB22AT3, G
1SMB24AT3, G
LT
LV
LX
LZ
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
870
790
730
675
1SMB26AT3, G
1SMB28AT3, G
1SMB30AT3, G
1SMB33AT3, G
ME
MG
MK
MM
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
630
590
555
510
1SMB36AT3, G
1SMB40AT3, G
1SMB43AT3, G
1SMB45AT3, G
MP
MR
MT
MV
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.1
46.75
50.3
52.65
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
470
430
400
385
1SMB48AT3, G
1SMB51AT3, G
1SMB54AT3, G
1SMB58AT3, G
MX
MZ
NE
NG
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
365
345
330
310
1SMB60AT3, G
1SMB64AT3, G
1SMB70AT3, G
1SMB75AT3, G
NK
NM
NP
NR
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.2
74.85
81.9
87.7
73.7
78.6
86
92.1
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
300
280
260
245
1SMB85AT3, G
1SMB90AT3, G
1SMB100AT3, G
NV
NX
NZ
85
90
100
55.0
5.0
5.0
94.4
100
111
99.2
105.5
117
104
111
123
1.0
1.0
1.0
137
146
162
4.4
4.1
3.7
220
210
190
1SMB110AT3, G
1SMB120AT3, G
1SMB130AT3, G
1SMB150AT3, G
PE
PG
PK
PM
110
120
130
150
5.0
5.0
5.0
5.0
122
133
144
167
128.5
140
151.5
176
135
147
159
185
1.0
1.0
1.0
1.0
177
193
209
243
3.4
3.1
2.9
2.5
175
160
150
135
1SMB160AT3, G
1SMB170AT3, G
PP
PR
160
170
5.0
5.0
178
189
187.5
199
197
209
1.0
1.0
259
275
2.3
2.2
125
120
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25°C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data − 600 W at the beginning of this group.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25°C
†Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
* The “G” suffix indicates Pb−Free package available.
P1-P3P4-P6P7-P7

1SMB100AT3

Mfr. #:
Buy 1SMB100AT3
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 100V 600W
Lifecycle:
New from this manufacturer.
Delivery:
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