BSS123,215

Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
Instead of http://www.nxp.com, http://www.philips.com/ or http://www.semiconductors.philips.com/,
use http://www.nexperia.com
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salesaddresses@nexperia.com (email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
- © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
- © Nexperia B.V. (year). All rights reserved.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
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Kind regards,
Team Nexperia
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
FEATURES SYMBOL QUICK REFERENCE DATA
’Trench’ technology
• Extremely fast switching V
DSS
= 100 V
• Logic level compatible
• Subminiature surface mounting I
D
= 150 mA
package
R
DS(ON)
6 (V
GS
= 10 V)
GENERAL DESCRIPTION PINNING SOT23
N-channel enhancement mode PIN DESCRIPTION
field-effect transistor in a plastic
envelope using trench 1 gate
technology.
2 source
Applications:-
• Relay driver 3 drain
• High-speed line driver
• Telephone ringer
The BSS123 is supplied in the
SOT23 subminiature surface
mounting package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DSS
Drain-source voltage T
j
= 25 ˚C to 150˚C - 100 V
V
DGR
Drain-gate voltage T
j
= 25 ˚C to 150˚C; R
GS
= 20 k - 100 V
V
GS
Gate-source voltage - ± 20 V
I
D
Continuous drain current T
a
= 25 ˚C - 150 mA
I
DM
Pulsed drain current T
a
= 25 ˚C - 600 mA
P
D
Total power dissipation T
a
= 25 ˚C - 0.25 W
T
j
, T
stg
Operating junction and - 55 150 ˚C
storage temperature
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-a
Thermal resistance junction surface mounted on FR4 board 500 - K/W
to ambient
d
g
s
1
2
3
Top view
August 2000 1 Rev 1.000
Philips Semiconductors Product specification
N-channel TrenchMOS transistor BSS123
Logic level FET
ELECTRICAL CHARACTERISTICS
T
j
= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
Drain-source breakdown V
GS
= 0 V; I
D
= 10 µA 100 130 - V
voltage
V
GS(TO)
Gate threshold voltage V
DS
= V
GS
; I
D
= 1 mA 1 2 2.8 V
R
DS(ON)
Drain-source on-state V
GS
= 10 V; I
D
= 120 mA - 3.5 6
resistance
g
fs
Forward transconductance V
DS
= 25 V; I
D
= 120 mA - 350 - mS
I
DSS
Zero gate voltage drain V
DS
= 60 V; V
GS
= 0 V - 10 100 nA
current
I
GSS
Gate source leakage current V
GS
= ±20 V; V
DS
= 0 V - 10 100 nA
t
on
Turn-on time V
DD
= 50 V; R
D
= 250 ; V
GS
= 10 V; - 3 10 ns
R
G
= 50 ; Resistive load
t
off
Turn-off time - 12 20 ns
C
iss
Input capacitance V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz - 23 40 pF
C
oss
Output capacitance - 6 25 pF
C
rss
Feedback capacitance - 4 10 pF
August 2000 2 Rev 1.000

BSS123,215

Mfr. #:
Manufacturer:
Nexperia
Description:
MOSFET N-CH TRNCH 100V .15A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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