OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

S150JR

P1-P2
V
RRM
= 600 V - 1200 V
I
F
=150 A
Features
• High Surge Capability DO-8 Package
• Types up to 1200 V V
RRM
Parameter Symbol S150J (R) S150K (R) Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
600 800 V
Silicon Standard
Recover
y
Diode
Conditions
1200
S150J thru S150QR
S150Q (R)
1000
S150M (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
pp g
RMS reverse voltage
V
RMS
420 560 V
DC blocking voltage
V
DC
600 800 V
Continuous forward current
I
F
150 150 A
Operating temperature
T
j
-65 to 200 -65 to 200 °C
Storage temperature
T
stg
-65 to 200 -65 to 200 °C
Parameter Symbol S150J (R) S150K (R) Unit
Diode forward voltage 1.2 1.2
10 10 μA
15 15 mA
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
0.35 0.35 °C/W
-65 to 200 -65 to 200
T
C
= 25 °C, t
p
= 8.3 ms
840
12001000
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
-65 to 200
S150Q (R)
10 10
S150M (R)
0.35
V
R
= 600 V, T
j
= 150 °C
0.35
1.2 1.2
9
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
V
R
= 600 V, T
j
= 25 °C
I
F
= 150 A, T
j
= 25 °C
T
C
≤ 180 °C
Conditions
700
3140 3140
-65 to 200
150 150
15
A3140
Reverse current
I
R
V
F
3140
www.genesicsemi.com
1
S150J thru S150QR
www.genesicsemi.com
2
P1-P2

S150JR

Mfr. #:
Buy S150JR
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 600V 150A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet