Characteristics STPS3L60-Y
2/7 Doc ID 17537 Rev 1
1 Characteristics
To evaluate the conduction losses use the following equation:
P = 0.54 x I
F(AV)
+ 0.037x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 60 V
I
F(RMS)
Forward rms current 10 A
I
F(AV)
Average forward current
T
C
= 100 °C δ = 0.5
3A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms Sinusoidal 75 A
I
RRM
Repetitive peak reverse current
t
p
= 2 µs square F=1 kHz
1A
P
ARM
Repetitive peak avalanche power
t
p
= 1 µs T
j
= 25 °C
1600 W
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature range
(1)
1. condition to avoid thermal runaway for a diode on its own heatsink
-40 to +150 °C
dV/dt Critical rate of rise reverse voltage 10000 V/µs
Table 3. Thermal resistances
Symbol Parameter Value Unit
R
th (j-l)
Junction to leads 20 ° C/W
Table 4. Static electrical characteristics
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
1. Pulse test: t
p
= 380 µs, δ < 2%
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
55
µA
T
j
= 125 °C
10 15
mA
V
F
(1)
Forward voltage drop
T
j
= 25 °C
I
F
= 3 A 0.7
V
T
j
= 125 °C
I
F
= 3 A 0.56 0.65
T
j
= 25 °C
I
F
= 6 A 0.94
T
j
= 125 °C
I
F
= 6 A 0.67 0.76
dPtot
dTj
---------------
1
Rth j a–()
--------------------------
<
