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VSSAF3N50-M3/6A

P1-P3P4-P5
VSSAF3N50
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jul-14
1
Document Number: 87720
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
TYPICAL APPLICATIONS
For use in low voltage, high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
FEATURES
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-221AC (SlimSMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
M3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1)
Mounted on 5 mm x 5 mm copper pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
PRIMARY CHARACTERISTICS
I
F(AV)
3.0 A
V
RRM
50 V
I
FSM
80 A
V
F
at I
F
= 3.0 A 0.40 V
T
J
max. 150 °C
Package DO-221AC (SlimSMA)
Diode variation Single die
DO-221AC
TMBS
®
SlimSMA
TM
Top View
Bottom View
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL VSSAF3N50 UNIT
Device marking code 3N5
Maximum repetitive peak reverse voltage V
RRM
50 V
Maximum DC forward current (fig. 1)
I
F
(1)
3.0
A
I
F
(2)
2.7
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
80 A
Maximum DC reserve voltage V
DC
35 V
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
VSSAF3N50
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jul-14
2
Document Number: 87720
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 5 ms
Note
(1)
Free air, mounted on recommended PCB, 2 oz. pad area; thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 1.5 A
T
A
= 25 °C
V
F
(1)
0.40 -
V
I
F
= 3.0 A 0.47 0.54
I
F
= 1.5 A
T
A
= 125 °C
0.30 -
I
F
= 3.0 A 0.40 0.48
Reverse current
V
R
= 35 V
T
A
= 25 °C
I
R
(2)
0.01 -
mA
T
A
= 125 °C 8 -
V
R
= 50 V
T
A
= 25 °C - 1
T
A
= 125 °C 12.5 35
Typical junction capacitance 4.0 V, 1 MHz C
J
570 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise specified)
PARAMETER SYMBOL VSSAF3N50 UNIT
Typical thermal resistance
R
JA
(1)
115
°C/W
R
JM
(1)
12
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
VSSAF3N50-M3/6A 0.032 6A 3500 7" diameter plastic tape and reel
VSSAF3N50-M3/6B 0.032 6B 14 000 13" diameter plastic tape and reel
0
0.5
1
1.5
2
2.5
3
3.5
0255075100125150
Average Forward Rectied Current (A)
Mount Temperature (°C)
Rth
JM
= 12 °C/W
Rth
JA
= 115 °C/W
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6
Average Power Loss (W)
Average Forward Current (A)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 1.0
D = 0.8
D = t
p
/T
T
t
p
VSSAF3N50
www.vishay.com
Vishay General Semiconductor
Revision: 24-Jul-14
3
Document Number: 87720
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
Fig. 7 - Thermal Resistance Junction to Ambient
vs. Copper Pad Area
0.1
1
10
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
0.001
0.01
0.1
1
10
100
10 20 30 40 50 60 70 80 90 100
Instantaneous Reverse Current (mA)
Percent of Rated Peak Reverse Voltage (%)
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10
100
1000
10 000
0.1 1 10 100
Junction Capacitance (pF)
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
1
10
100
1000
0.01 0.1 1 10 100
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
Junction to Ambient
0
20
40
60
80
100
120
140
0246810
Thermal Resistance (°
C/W)
Copper Pad Areas (cm
2
)
Scu (cm
2
)
Epoxy printed circuit
board FR4 copper
thickness = 70 μm
P1-P3P4-P5

VSSAF3N50-M3/6A

Mfr. #:
Buy VSSAF3N50-M3/6A
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 3A, 50V,TRENCH SKY RECT.
Lifecycle:
New from this manufacturer.
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