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MOC8101-X017T

P1-P3P4-P6P7-P7
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 13-Sep-11
1
Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, no Base Connection
DESCRIPTION
The MOC8101, MOC8102, MOC8103, MOC8104,
MOC8105 family optocoupler consisting of a gallium
arsenide infrared emitting diode optically coupled to a
silicon planar phototransistor detector in a plastic plug-in
DIP-6 package.
The coupling device is suitable for signal transmission
between two electrically separated circuits. The potential
difference between the circuits to be coupled should not
exceed the maximum permissible reference voltages.
The base terminal of the MOC8101, MOC8102, MOC8103,
MOC8104, MOC8105 is not connected, resulting in a
substantially improved common mode interference
immunity.
FEATURES
• Isolation test voltage, 5300 V
RMS
• No base terminal connection for improved
common mode interface immunity
• Long term stability
• Industry standard dual in line package
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
AGENCY APPROVALS
• UL1577, file no. E52744 system code H or J, double
protection
• CSA 93751
• BSI IEC 60950; IEC 60065
• DIN EN 60747-5-5 (VDE 0884) available with option 1
Note
• Additional options may be possible, please contact sales office.
1
2
3
6
5
4
B
C
E
A
C
NC
i179009-1
ORDERING INFORMATION
MOC 8 1 0 # - # X 0 # # T
PART NUMBER CTR
BIN
PACKAGE OPTION TAPE
AND
REEL
AGENCY CERTIFIED/PACKAGE
CTR (%)
10 mA
UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133
DIP-6 MOC8101 MOC8102 MOC8103 MOC8104 MOC8105
DIP-6, 400 mil, option 6 - MOC8102-X006 - - -
SMD-6, option 9 MOC8101-X009 MOC8102-X009 - - -
VDE, UL, CSA, BSI 50 to 80 73 to 117 108 to 173 160 to 256 65 to 133
DIP-6 MOC8101-X001 - MOC8103-X001 - -
DIP-6, 400 mil - MOC8102-X016 - MOC8104-X016 -
SMD-6, option 7 MOC8101-X017T MOC8102-X017T - - -
SMD-6, option 9 - - - MOC8104-X019T -
> 0.1 mm
10.16 mm
> 0.7 mm
7.62 mm
DIP-#
Option 7
Option 6
Option 9
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 13-Sep-11
2
Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
(2)
Applies to wide bending option 6.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6.0 V
Forward continuous current I
F
60 mA
Surge forward current t 10 μs I
FSM
2.5 A
Power dissipation P
diss
100 mW
Derate linearly from 25°C 1.33 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
30 V
Emitter collector breakdown voltage BV
ECO
7.0 V
Collector current I
C
50 mA
Derate linearly from 25°C 2.0 mW/°C
Power dissipation P
diss
150 mW
COUPLER
Isolation test voltage
V
ISO
5300 V
RMS
Creepage distance
7.0 mm
8.0
(2)
mm
Clearance distance
7.0 mm
8.0
(2)
mm
Isolation thickness between
emitter and detector
0.4 mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
CTI 175
Isolation resistance V
IO
= 500 V R
IO
10
12
Derate linearly from 25 °C 3.33 mW/°C
Total power dissipation P
tot
250 mW
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature
(1)
max. 10 s, dip soldering:
distance to seating plane 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.25 1.5 V
Breakdown voltage I
R
= 10 μA V
BR
6.0 V
Reverse current V
R
= 6.0 V I
R
0.01 10 μA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
25 pF
Thermal resistance R
thja
750 K/W
OUTPUT
Collector emitter capacitance V
CE
= 5.0 V, f = 1.0 MHz C
CE
5.2 pF
Collector emitter dark current
V
CE
= 10 V, T
amp
= 25 °C MOC8101 I
CEO1
1.0 50 nA
V
CE
= 10 V, T
amp
= 100 °C MOC8102 I
CEO1
1.0 μA
Collector emitter breakdown voltage I
C
= 1.0 mA BV
CEO
30 V
Emitter collector breakdown voltage I
E
= 100 ABV
ECO
7.0 V
Thermal resistance R
thja
500 K/W
COUPLER
Saturation voltage collector emitter I
F
= 5.0 mA V
CEsat
0.25 0.4 V
Coupling capacitance C
C
0.6 pF
MOC8101, MOC8102, MOC8103, MOC8104, MOC8105
www.vishay.com
Vishay Semiconductors
Rev. 1.6, 13-Sep-11
3
Document Number: 83660
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Forward Current
Fig. 2 - Collector Current vs. LED Forward Current
Fig. 3 - Collector Current vs. Collector Emitter Voltage
Fig. 4 - Collector Current vs. Ambient Temperature
CURRENT TRANSFER RATIO (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Current transfer ratio V
CE
= 10 V, I
F
= 10 mA
MOC8101 CTR 50 80 %
MOC8102 CTR 73 117 %
MOC8103 CTR 108 173 %
MOC8104 CTR 160 256 %
MOC8105 CTR 65 133 %
SWITCHING CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION
SYMBO
L
MIN. TYP. MAX. UNIT
Turn-on time V
CC
= 10 V, I
C
= 2.0 mA, R
L
= 100 t
on
3.0 μs
Turn-off time V
CC
= 10 V, I
C
= 2.0 mA, R
L
= 100 t
off
2.3 μs
Rise time V
CC
= 10 V, I
C
= 2.0 mA, R
L
= 100 t
r
2.0 μs
Fall time V
CC
= 10 V, I
C
= 2.0 mA, R
L
= 100 t
f
2.0 μs
Cut off frequency f
co
250 kHz
imoc8101_02
1.7
1.5
1.3
1.1
0.9
0.7
I
F
(mA)
V
F
(V)
0.1
1
10
100
T
A
= 55 °C
T
A
= 25 °C
T
A
= 100 °C
imoc8101_03
10
1
0.1
0.01
I
C
(Normalized)
0.1 1 10 100
I
F
(mA)
Normalized to I
F
= 10 mA
imoc8101_04
MOC8104
MOC8103
MOC8102
MOC8101
MOC8105
I
F
= 10 mA
25
20
15
10
5
0
I
C
(mA)
0 12345 678910
V
CE
(V)
imoc8101_05
T
A
(°C)
I
C
(mA)
10
1
0.1
- 60 - 40
- 20
0
20 40 60 80 100 120
Normalized to T
A
= 25 °C
I
F
= 10 mA
V
CE
= 10 V
P1-P3P4-P6P7-P7

MOC8101-X017T

Mfr. #:
Buy MOC8101-X017T
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Phototransistor Out Single CTR > 50-80%
Lifecycle:
New from this manufacturer.
Delivery:
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