DATA SHEET
Product specification
Supersedes data of 2003 Sep 08
2004 Aug 04
DISCRETE SEMICONDUCTORS
PDTA143E series
PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 4.7 k
2004 Aug 04 2
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 4.7 k
PDTA143E series
FEATURES
Built-in bias resistors
Simplified circuit design
Reduction of component count
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification
Inverter and interface circuits
Circuit driver.
QUICK REFERENCE DATA
DESCRIPTION
PNP resistor-equipped transistor (see “Simplified outline,
symbol and pinning” for package details).
SYMBOL PARAMETER TYP. MAX. UNIT
V
CEO
collector-emitter
voltage
−−50 V
I
O
output current (DC) −−100 mA
R1 bias resistor 4.7 k
R2 bias resistor 4.7 k
PRODUCT OVERVIEW
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
PACKAGE
MARKING CODE NPN COMPLEMENT
PHILIPS EIAJ
PDTA143EE SOT416 SC-75 01 PDTC143EE
PDTA143EEF SOT490 SC-89 50 PDTC143EEF
PDTA143EK SOT346 SC-59 01 PDTC143EK
PDTA143EM SOT883 SC-101 DL PDTC143EM
PDTA143ES SOT54 (TO-92) SC-43 TA143E PDTC143ES
PDTA143ET SOT23 *01
(1)
PDTC143ET
PDTA143EU SOT323 SC-70 *01
(1)
PDTC143EU
2004 Aug 04 3
Philips Semiconductors Product specification
PNP resistor-equipped transistors;
R1 = 4.7 k, R2 = 4.7 k
PDTA143E series
SIMPLIFIED OUTLINE, SYMBOL AND PINNING
TYPE NUMBER SIMPLIFIED OUTLINE AND SYMBOL
PINNING
PIN DESCRIPTION
PDTA143ES 1 base
2 collector
3 emitter
PDTA143EE 1 base
PDTA143EEF 2 emitter
PDTA143EK 3 collector
PDTA143ET
PDTA143EU
PDTA143EM 1 base
2 emitter
3 collector
handbook, halfpage
MAM338
1
2
3
R1
R2
2
3
1
handbook, halfpage
MDB271
Top view
1
2
3
1
2
3
R1
R2
handbook, halfpage
MDB267
2
1
3
Bottom view
1
2
3
R1
R2

PDTA143EK,115

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
TRANS PREBIAS PNP 250MW SMT3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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