Document Number: 73449
S10-0792-Rev. C, 05-Apr-10
www.vishay.com
5
Vishay Siliconix
Si1869DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73449
.
Switching Variation
R2 at V
IN
= 1.8 V, R1 = 300 k:
0
50
100
150
200
020406080100
R2 (kΩ)
(Time μs)
I
L
= 1 A
V
ON/OFF
= 3 V
C
i
= 10 μF
C
o
= 1 μF
t
f
t
d(off)
t
r
t
d(on)
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-3
10
-2
00601110
-1
10
-4
100
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective
Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 100 °C/W
3. T
JM
- T
A
= P
DM
Z
thJA
(t)
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
01110
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
