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NTP60N06

P1-P3P4-P6P7-P9P10-P10
Semiconductor Components Industries, LLC, 2004
October, 2004 − Rev. 3
1 Publication Order Number:
NTP60N06/D
NTP60N06, NTB60N06
Power MOSFET
60 V, 60 A, N−Channel
TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 M) V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
10 ms)
V
GS
V
GS
20
30
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
= 100°C
− Single Pulse (t
p
10 s)
I
D
I
D
I
DM
60
42.3
180
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
P
D
150
1.0
2.4
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
+175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 75 Vdc, V
GS
= 10 Vdc, L = 0.3 mH
I
L(pk)
= 55 A, V
DS
= 60 Vdc)
E
AS
454 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
R
JC
R
JA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
60 VOLTS, 60 AMPERES
R
DS(on)
= 14 m
N−Channel
D
S
G
TO−220
CASE 221A
STYLE 5
1
2
3
4
NTx60N06 = Device Code
x = P or B
A = Assembly Location
Y = Year
WW = Work Week
NTx60N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx60N06
AYWW
1
Gate
3
Source
4
Drain
2
Drain
D
2
PAK
CASE 418B
STYLE 2
2
3
4
MARKING
DIAGRAMS
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
NTP60N06, NTB60N06
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
72.3
69.8
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
= 150°C)
I
DSS
−
−
−
−
1.0
10
Adc
Gate−Body Leakage Current (V
GS
= ±20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 Adc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
2.0
−
2.85
8.0
4.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 10 Vdc, I
D
= 30 Adc)
R
DS(on)
− 11.5 14
m
Static Drain−to−Source On−Voltage (Note 2)
(V
GS
= 10 Vdc, I
D
= 60 Adc)
(V
GS
= 10 Vdc, I
D
= 30 Adc, T
J
= 150°C)
V
DS(on)
−
−
0.715
1.43
1.01
−
Vdc
Forward Transconductance (Note 2) (V
DS
= 8.0 Vdc, I
D
= 12 Adc) g
FS
− 35 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vd V 0Vd
C
iss
− 2300 3220 pF
Output Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz
)
C
oss
− 660 925
Transfer Capacitance
f
=
1
.
0
MHz)
C
rss
− 144 300
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
t
d(on)
− 25.5 50 ns
Rise Time
(V
DD
= 30 Vdc, I
D
= 60 Adc,
t
r
− 180.7 360
Turn−Off Delay Time
(V
DD
30
Vdc
,
I
D
60
Adc
,
V
GS
= 10 Vdc, R
G
= 9.1 ) (Note 2)
t
d(off)
− 94.5 200
Fall Time t
f
− 142.5 300
Gate Charge
(V 48 Vd I 60 Ad
Q
T
− 62 81 nC
(V
DS
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 10 Vdc
)
(
Note 2
)
Q
1
− 10.8 −
V
GS
=
10
Vdc)
(Note
2)
Q
2
− 29.4 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 60 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 45 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
0.99
0.87
1.05
−
Vdc
Reverse Recovery Time
(I 60 Ad V 0Vd
t
rr
− 64.9 −
ns
(I
S
= 60 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/
s
)
(
Note 2
)
t
a
− 44.1 −
dI
S
/dt
=
100
A/s)
(Note
2)
t
b
− 20.8 −
Reverse Recovery Stored Charge Q
RR
− 0.146 − C
2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
NTP60N06, NTB60N06
http://onsemi.com
3
0.026
0.022
0.018
0.01
40200
0.006
12060
0.014
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 15 V
80 100
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
120
60
40
20
53210
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
86543
120
60
40
20
0
0
Figure 3. On−Resistance versus Gate−to−Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
0.026
0.022
0.018
0.01
40200
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
0
0.006
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
2.2
2
1.8
1.6
1.4
1.2
1
0.8
1751251007550250−25−50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
1000
100
10
0.6
10,000
Figure 6. Drain−to−Source Leakage Current
versus Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
12060
0.014
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE ()
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
20 60
4
30 40 50
4.5 V
5 V
5.5 V
7 V
6 V
9 V
8 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
DS
= 10 V
I
D
= 30 A
V
GS
= 10 V
T
J
= 150°C
V
GS
= 0 V
T
J
= 100°C
80
100
80
100
7
80 100
150
T
J
= 125°C
P1-P3P4-P6P7-P9P10-P10

NTP60N06

Mfr. #:
Buy NTP60N06
Manufacturer:
ON Semiconductor
Description:
MOSFET 60V 60A N-Channel
Lifecycle:
New from this manufacturer.
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