NTMFS4945N
http://onsemi.com
5
TYPICAL CHARACTERISTICS
0
200
400
600
800
1000
1200
1400
0 5 10 15 20 25 30
Figure 7. Capacitance Variation
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
C
iss
C
oss
C
rss
V
GS
= 0 V
T
J
= 25°C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 5 10 15 20
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Q
g,
TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
QT
Q
gs
Q
gd
V
DD
= 15 V
V
GS
= 10 V
I
D
= 30 A
Q
T
1
10
100
1000
1 10 100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
R
G
, GATE RESISTANCE (W)
t, TIME (ns)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 10 V
t
d(off)
t
d(on)
t
r
t
f
0
5
10
15
20
25
30
0.4 0.5 0.6 0.7 0.8 0.9 1.0
Figure 10. Diode Forward Voltage vs. Current
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
I
S
, SOURCE CURRENT (A)
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V
0.1
1
10
100
1000
0.1 1 10 100
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
V
GS
= 20 V
Single Pulse
T
C
= 25°C
R
DS(on)
Limit
Thermal Limit
Package Limit
100 ms
10 ms
1 ms
dc
25 50 75 100 125 1
0
5
10
15
20
25
30
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE (°C)
E
AS
, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
I
D
= 23 A
