SPEC NO: DSAM8553 REV NO: V.2A DATE: MAR/31/2015 PAGE: 2 OF 6
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301002333
Selection Guide
Note:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1.Wavelength: +/-1nm.
2.Forward Voltage: +/-0.1V.
3.Wavelength value is traceable to the CIE127-2007 compliant national standards.
4.Excess driving current and/or operating temperature higher than recommended conditions may result in severe light degradation or
premature failure.
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No. Dice Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min. Typ.
SA08-11SYKWA Super Bright Yellow (AlGaInP) White Diffused
52000 140000
*21000 *42000
Common Anode,
Rt. Hand Decimal.
Symbol Parameter Device Typ. Max. Units Test Conditions
λpeak Peak Wavelength Super Bright Yellow 590 nm I
F=20mA
λD [1] Dominant Wavelength Super Bright Yellow 590 nm I
F=20mA
Δλ1/2 Spectral Line Half-width Super Bright Yellow 20 nm I
F=20mA
C Capacitance Super Bright Yellow 20 pF V
F=0V;f=1MHz
V
F [2] Forward Voltage Super Bright Yellow 2.0 2.5 V IF=20mA
I
R Reverse Current Super Bright Yellow 10 uA VR=5V
Parameter Super Bright Yellow Units
Power dissipation 75 mW
DC Forward Current 30 mA
Peak Forward Current [1] 175 mA
Reverse Voltage 5 V
Operating / Storage Temperature -40°C To +85°C
Lead Solder Temperature[2] 260°C For 3-5 Seconds
