V
RRM
= 50 V - 1000 V
I
F
= 1.5 A
Features
• Types up to 1000 V V
RRM
DB Package
• Ideal for printed circuit board
• High surge current capability
• Small size, simple installation
Mechanical Data
Case: Molded plastic
Polarity: Polarity symbols marked on body
Mounting position: Any
DB155G thru DB157G
• High temperature soldering guaranteed: 250⁰C/ 10
seconds
Terminals: Plated leads, solderable per MIL-STD-202
Method 208 guaranteed
Silicon Bridge
Rectifier
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Unit
Repetitive peak reverse voltage
V
RRM
V
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 50 V, T
j
= 25 °C
I
F
= 1.5 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
1.1
-65 to 150
Conditions
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤ 40 °C
Conditions
DB155G DB156G DB157G
800
560420
DB156G
36.00 36.00
V
R
= 50 V, T
j
= 125 °C
500 500
1.1
500
800600
5
DB157G
1.1
55
-65 to 150 -65 to 150
-65 to 150 -65 to 150 -65 to 150
DB155G
μA
36.00
1.5 1.5 1.5
50 50 50
600 1000
700
1000
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