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RP1E090RPTR

P1-P3P4-P6
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
4V Drive Pch MOSFET
RP1E090RP
Structure Dimensions (Unit : mm)
Silicon P-channel MOSFET
Features
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (MPT6).
Application
Switching
Packaging specifications Inner circuit
Package Taping
Code TR
Basic ordering unit (pieces) 1000
RP1E090RP
Absolute maximum ratings (Ta = 25C)
Symbol Limits Unit
Drain-source voltage V
DSS
30 V
Gate-source voltage V
GSS
20 V
Continuous I
D
9A
Pulsed I
DP
36 A
Continuous I
S
1.6 A
Pulsed I
SP
36 A
Power dissipation P
D
2.0 W
Channel temperature Tch 150 C
Range of storage temperature Tstg 55 to +150 C
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
Thermal resistance
Symbol Limits Unit
Channel to Ambient Rth (ch-a) 62.5 C / W
*Mounted on a ceramic board.
Parameter
Type
Source current
(Body Diode)
Drain current
Parameter
*2
*1
*1
*
(1) Source
(2) Source
(3) Gate
(4) Drain
(5) Drain
(6) Drain
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
MPT6
(6) (5) (4)
(1)
(2) (3)
∗2
∗1
(5) (4)
(2)
(
1) (
3)
(6)
1/5
2010.06 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
RP1E090RP
　
Electrical characteristics (Ta = 25C)
Symbol Min. Typ. Max. Unit
Gate-source leakage I
GSS
--10 AV
GS
=±20V, V
DS
=0V
Drain-source breakdown voltage V
(BR)DSS
30 - - V I
D
=1mA, V
GS
=0V
Zero gate voltage drain current I
DSS
--1 AV
DS
=30V, V
GS
=0V
Gate threshold voltage V
GS (th)
1.0 - 2.5 V V
DS
=10V, I
D
=1mA
- 13 16.9 I
D
=9A, V
GS
=10V
- 18 25.2 I
D
=9A, V
GS
=4.5V
21 29.4 I
D
=9A, V
GS
=4.0V
Forward transfer admittance l Y
fs
l10 - - SI
D
=9A, V
DS
=10V
Input capacitance C
iss
- 3000 - pF V
DS
=10V
Output capacitance C
oss
- 360 - pF V
GS
=0V
Reverse transfer capacitance C
rss
- 360 - pF f=1MHz
Turn-on delay time t
d(on)
- 20 - ns I
D
=4.5A, V
DD
15V
Rise time t
r
- 30 - ns V
GS
=10V
Turn-off delay time t
d(off)
- 135 - ns R
L
=3.3
Fall time t
f
- 80 - ns R
G
=10
Total gate charge Q
g
- 30 - nC I
D
=9A
Gate-source charge Q
gs
-7-nCV
DD
-15V
Gate-drain charge Q
gd
- 11 - nC V
GS
=5V
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Symbol Min. Typ. Max. Unit
Forward Voltage V
SD
--1.2 V I
s
=9A, V
GS
=0V
*Pulsed
Conditions
Conditions
m
Parameter
Parameter
Static drain-source on-state
resistance
R
DS (on)
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
2/5
2010.06 - Rev.A
Data Sheet
www.rohm.com
©2010 ROHM Co., Ltd. All rights reserved.
RP1E090RP
　
Electrical characteristic curves
1
10
100
0.1 1 10
0.001
0.01
0.1
1
10
100
0123
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
1
10
100
0.1 1 10
V
GS
= -4.0V
V
GS
= -4.5V
V
GS
= -10V
0
2
4
6
8
10
12
14
16
18
20
0 0.2 0.4 0.6 0.8 1
V
GS
= -10V
V
GS
= -4.0V
V
GS
= -3.4V
V
GS
= -3.2V
V
GS
= -4.5V
V
GS
= -2.8V
Ta=25°C
Pulsed
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
0
2
4
6
8
10
12
14
16
18
20
0246810
V
GS
= -2.4V
V
GS
=-3.2V
Ta=25°C
Pulsed
V
GS
=-2.8V
1
10
100
0.1 1 10
1
10
100
0.1 1 10
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
0
1
10
100
0.1 1 10
1
10
100
0.1 1 10
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅰ)
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅲ)
Fig.7 Static Drain-Source On-State
Resistance vs. Drain
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
Fig.8 Forward Transfer Admittance
vs. Drain Current
Fig.1 Typical output characteristics( Ⅰ)
Fig.2 Typical output characteristics( Ⅱ)
Fig.3 Typical Transfer Characteristics
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN CURRENT : -I
D
[A]
DRAIN-SOURCE VOLTAGE : -V
DS
[V]
DRAIN CURRENT : -I
D
[A]
GATE-SOURCE VOLTAGE : -V
GS
[V]
DRAIN CURRENT : -I
D
[A]
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
]
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS
(
on
)
[m
]
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
]
DRAIN CURRENT : -I
D
[A]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : R
DS(on)
[m
]
SOURCE - DRAIN VOLTAGE : -V
SD
[V]
REVERSE DRAIN CURRENT : -Is [A]
FORWARD TRANSFER ADMITTANCE
: |Yfs|[S]
DRAIN CURRENT : -I
D
[A]
V
GS
= -10V
V
GS
= -4.5V
V
GS
= -4.0V
Ta=25°C
Pulsed
V
GS
= -10V
Pulsed
V
GS
= -4.5V
Pulsed
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
V
GS
= -4.0V
Pulsed
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
V
DS
= -10V
Pulsed
Ta= 125℃
Ta= 75℃
Ta= 25℃
Ta= - 25℃
V
GS
=0V
Pulsed
V
DS
= -10V
Pulsed
3/5
2010.06 - Rev.A
P1-P3P4-P6

RP1E090RPTR

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MOSFET P-CH 30V 9A MPT6
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