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FCX591ATA

P1-P3P4-P6P7-P7
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
1 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FCX591A
A
Product Line o
f
Diodes Incorporated
40V PNP SILICON PLANAR MEDIUM POWER TRANSISTOR IN SOT89
Features
• BV
CEO
> -40V
• Maximum Continuous Current I
C
= -1A
• Low saturation voltage V
CE(sat)
< -500mV @ -1A
• Complementary NPN type: FCX491A
• Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Application
• Power MOSFET & IGBT gate driving
• Low loss power switching
Mechanical Data
• Case: SOT89
• Case material: molded plastic. “Green” molding compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
• Weight: 0.05 grams (Approximate)
Ordering Information (Note 4)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
FCX591ATA P2 7 12 1,000
FCX591A-13R P2 13 12 4,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
P2 = Product Type Marking Code
P2
Top View
Device Symbol
Top View
Pin Out
SOT89
C
E
C
B
C
E
B
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
2 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FCX591A
A
Product Line o
f
Diodes Incorporated
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Limit Unit
Collector-Base Voltage
V
CBO
-40 V
Collector-Emitter Voltage
V
CEO
-40 V
Emitter-Base Voltage
V
EBO
-7 V
Continuous Collector Current
I
C
-1 A
Peak Pulse Current
I
CM
-2 A
Peak Base Current
I
B
-200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 5)
P
D
1 W
Thermal Resistance, Junction to Ambient Air (Note 5)
R
θJA
125
°C/W
Thermal Resistance, Junction to Leads (Note 6)
R
θJL
10.01
°C/W
Operating and Storage Temperature Range
T
J,
T
STG
-65 to +150
°C
ESD Ratings (Note 7)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM ≥ 8,000 V 3B
Electrostatic Discharge - Machine Model ESD MM ≥ 400 V C
Notes: 5. For a device surface mounted on 15mm X 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FCX591A
Da
tasheet Number: DS33062 Rev. 6 - 2
3 of 7
www.diodes.com
October 2012
© Diodes Incorporated
FCX591A
A
Product Line o
f
Diodes Incorporated
Thermal Characteristics and Derating Information
0 25 50 75 100 125 150
0.0
0.2
0.4
0.6
0.8
1.0
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
20
40
60
80
100
120
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
1
10
100
Single Pulse. T
amb
=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
P1-P3P4-P6P7-P7

FCX591ATA

Mfr. #:
Buy FCX591ATA
Manufacturer:
Diodes Incorporated
Description:
Bipolar Transistors - BJT PNP Medium Power
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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