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BAT54WT1G

P1-P3P4-P4
Publication Order Number:
BAT54WT1/D
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
BAT54W
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
• Extremely Fast Switching Speed
• Extremely Low Forward Voltage − 0.35 V (Typ) @ I
F
= 10 mAdc
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (T
J
= 125°C unless otherwise noted)
Rating
Symbol Value Unit
Reverse Voltage V
R
30 V
Forward Power Dissipation
@ T
A
= 25°C
Derate above 25°C
P
F
200
1.6
mW
mW/°C
Forward Current (DC) I
F
200 Max mA
Non−Repetitive Peak Forward
Current,
t
p
< 10 msec
I
FSM
600
mA
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
I
FRM
300
mA
Junction Temperature T
J
−55 to 125 °C
Storage Temperature Range T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
3
CATHODE
1
ANODE
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
Device Package Shipping
†
ORDERING INFORMATION
BAT54WT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
www.onsemi.com
SOT−323
CASE 419
STYLE 2
MARKING DIAGRAM
B4M G
G
B4 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
1
NSVBAT54WT1G SOT−323
(Pb−Free)
3,000 /
Tape & Reel
BAT54W
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
Reverse Breakdown Voltage
(I
R
= 10 mA)
V
(BR)R
30 − −
V
Total Capacitance
(V
R
= 1.0 V, f = 1.0 MHz)
C
T
− 7.6 10
pF
Reverse Leakage
(V
R
= 25 V)
I
R
− 0.5 2.0
mAdc
Forward Voltage
(I
F
= 0.1 mA)
(I
F
= 1.0 mA)
(I
F
= 10 mA)
(I
F
= 30 mA)
(I
F
= 100 mA)
V
F
−
−
−
−
−
0.22
0.29
0.35
0.41
0.52
0.24
0.32
0.40
0.50
0.80
V
Reverse Recovery Time
(I
F
= I
R
= 10 mAdc, I
R(REC)
= 1.0 mAdc, Figure 1)
t
rr
− − 5.0
ns
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2 k
820
W
0.1 mF
DUT
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
T
10%
90%
I
F
I
R
t
rr
T
i
R(REC)
= 1 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; measure
d
at i
R(REC)
= 1 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAT54W
www.onsemi.com
3
C
T
, TOTAL CAPACITANCE (pF)
100
0.0 0.1
V
F
, FORWARD VOLTAGE (VOLTS)
0.2 0.3 0.4
0.5
10
1.0
0.1
85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
510
15
20
25
0
V
R
, REVERSE VOLTAGE (VOLTS)
51015 30
Figure 2. Forward Voltage
Figure 3. Leakage Current
Figure 4. Total Capacitance
−40°C
25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
0.6
−55°C
150°C
125°C
100
1000
30
2520
I
R
, REVERSE CURRENT (mA)
I
F
, FORWARD CURRENT (mA)
14
12
10
8
6
4
2
0
P1-P3P4-P4

BAT54WT1G

Mfr. #:
Buy BAT54WT1G
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 30V 200mW Single
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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