IPB17N25S3-100
IPP17N25S3-100
OptiMOS
™
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C, V
GS
=10 V
17 A
T
C
=100°C, V
GS
=10V
1)
13.3
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
68
Avalanche energy, single pulse
1)
E
AS
I
D
=5.4A
54 mJ
Avalanche current, single pulse
I
AS
-
5.4 A
Reverse diode dv /dt dv /dt-
6kV/µs
Gate source voltage
V
GS
-±20V
Power dissipation
P
tot
T
C
=25°C
107 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
250 V
R
DS(on),max
100
mΩ
I
D
17
A
Product Summary
PG-TO220-3-1PG-TO263-3-2
Type Package Marking
IPB17N25S3-100 PG-TO263-3-2 3N25100
IPP17N25S3-100 PG-TO220-3-1 3N25100
ev. 1.1 page 1 2013-05-13