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IPP17N25S3100AKSA1

P1-P3P4-P6P7-P9
IPB17N25S3-100
IPP17N25S3-100
OptiMOS
™
-T Power-Transistor
Features
• N-channel - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
I
D
T
C
=25 °C, V
GS
=10 V
17 A
T
C
=100°C, V
GS
=10V
1)
13.3
Pulsed drain current
1)
I
D,pulse
T
C
=25°C
68
Avalanche energy, single pulse
1)
E
AS
I
D
=5.4A
54 mJ
Avalanche current, single pulse
I
AS
-
5.4 A
Reverse diode dv /dt dv /dt-
6kV/µs
Gate source voltage
V
GS
-±20V
Power dissipation
P
tot
T
C
=25°C
107 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 - - 55/175/56
Value
V
DS
250 V
R
DS(on),max
100
mΩ
I
D
17
A
Product Summary
PG-TO220-3-1PG-TO263-3-2
Type Package Marking
IPB17N25S3-100 PG-TO263-3-2 3N25100
IPP17N25S3-100 PG-TO220-3-1 3N25100
R
ev. 1.1 page 1 2013-05-13
IPB17N25S3-100
IPP17N25S3-100
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
1)
Thermal resistance, junction - case
R
thJC
---1.4K/W
Thermal resistance, junction -
ambient, leaded
R
thJA
---62
SMD version, device on PCB
R
thJA
minimal footprint - - 62
6 cm
2
cooling area
2)
--40
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0V, I
D
= 1mA
250 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
=54µA
2.0 3.0 4.0
Zero gate voltage drain current
I
DSS
V
DS
=250V, V
GS
=0V
-0.011µA
V
DS
=250V, V
GS
=0V,
T
j
=125°C
2)
- 1 100
Gate-source leakage current
I
GSS
V
GS
=20V, V
DS
=0V
- 10 100 nA
Drain-source on-state resistance
R
DS(on)
V
GS
=10V, I
D
=17A
- 85 100
mΩ
Values
R
ev. 1.1 page 2 2013-05-13
IPB17N25S3-100
IPP17N25S3-100
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics
1)
Input capacitance
C
iss
- 1133 1500 pF
Output capacitance
C
oss
- 480 625
Reverse transfer capacitance
C
rss
-1123
Turn-on delay time
t
d(on)
-4.4-ns
Rise time
t
r
-3.7-
Turn-off delay time
t
d(off)
-7.5-
Fall time
t
f
-1.2-
Gate Char
g
e Characteristics
1), 3)
Gate to source charge
Q
gs
-57nC
Gate to drain charge
Q
gd
-2.44.8
Gate charge total
Q
g
-1419
Gate plateau voltage
V
plateau
-4.6-V
Reverse Diode
Diode continous forward current
1)
I
S
--17A
Diode pulse current
1)
I
S,pulse
--56
Diode forward voltage
V
SD
V
GS
=0V, I
F
=17A,
T
j
=25°C
-0.91.3V
Reverse recovery time
1)
t
rr
V
R
=125V, I
F
=17A,
di
F
/dt=100A/µs
- 120 - ns
Reverse recovery charge
1)
Q
rr
- 525 - nC
Values
V
GS
=0V, V
DS
=25V,
f=1MHz
V
DD
=125V, V
GS
=10V,
I
D
=17A, R
G
=3.3Ω
V
DD
=200V, I
D
=17A,
V
GS
=0 to 10V
3)
Devices thermal performance determined according to EIA JESD 51-14
"Transient Dual Interface Test Method For The Measurement Of The Thermal Resistance"
1)
Defined by design. Not subject to production test.
T
C
=25°C
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
R
ev. 1.1 page 3 2013-05-13
P1-P3P4-P6P7-P9

IPP17N25S3100AKSA1

Mfr. #:
Buy IPP17N25S3100AKSA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 250V 17A TO220-3
Lifecycle:
New from this manufacturer.
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