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DMN4800LSSL-13

P1-P3P4-P6
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
1 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN4800LSSL
NEW PRODUCT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
R
DS(on)
I
D
max
T
A
= +25°C
30V
14mΩ @ V
GS = 10V 8.0A
20mΩ @ VGS = 4.5V 6.7A
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (R
DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
• DC-DC Converters
• Power management functions
Features and Benefitss
• 14mΩ @ V
GS
= 10V
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.072 grams (approximate)
Ordering Information (Note 4)
Part Number Case Packaging
DMN4800LSSL-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Top View
SO-8
Top View
Internal Schematic
D
S
G
DS
D
D
D
S
S
G
Equivalent circuit
Chengdu A/T Site Shanghai A/T Site
= Manufacturer’s Marking
N4800LS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
1 4
8 5
N4800LS
WW
YY
1 4
8 5
N4800LS
WW
YY
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
2 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN4800LSSL
NEW PRODUCT
Maximum Ratings (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage
V
DSS
30 V
Gate-Source Voltage
V
GSS
±20
V
Drain Current (Note 5) VGS = 10V Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
8.0
6.4
A
Drain Current (Note 5) VGS = 10V Steady
State
T
A
= +25°C
T
A
= +70°C
I
D
6.7
5.3
A
Pulsed Drain Current (Note 6)
I
DM
50 A
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5)
P
D
1.46 W
Thermal Resistance, Junction to Ambient
R
θ
JA
86 °C/W
Operating and Storage Temperature Range
T
J,
T
STG
-55 to +150 °C
Electrical Characteristics (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BV
DSS
30
⎯ ⎯
V
V
GS
= 0V, I
D
= 250μA
Zero Gate Voltage Drain Current
I
DSS
⎯ ⎯
1
μA
V
DS
= 30V, V
GS
= 0V
Gate-Source Leakage
I
GSS
⎯ ⎯
±100
nA
V
GS
= ±20V, V
DS
= 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
V
GS
(
th
)
0.8 1.2 1.6 V
V
DS
= V
GS
, I
D
= 250μA
Static Drain-Source On-Resistance
R
DS (ON)
⎯
11
14
14
20
mΩ
V
GS
= 10V, I
D
= 8A
V
GS
= 4.5V, I
D
= 7A
Forward Transconductance
g
fs
⎯
8
⎯
S
V
DS
= 10V, I
D
= 8A
Diode Forward Voltage (Note 7)
V
SD
⎯
0.72 0.94 V
V
GS
= 0V, I
S
= 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
C
iss
⎯
798
⎯
pF
V
DS
= 10V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
C
oss
⎯
128
⎯
pF
Reverse Transfer Capacitance
C
rss
⎯
122
⎯
pF
Gate Resistance
R
G
⎯
1.37
⎯
Ω
V
DS
= 0V, V
GS
= 0V, f = 1.0MHz
Total Gate Charge
Q
g
⎯
8.7
⎯
nC
V
GS
= 5V, V
DS
= 15V, I
D
= 9A
Gate-Source Charge
Q
g
s
⎯
1.7
⎯
Gate-Drain Charge
Q
g
d
⎯
2.4
⎯
Turn-On Delay Time
t
d
(
on
)
⎯
5.03
⎯
ns
V
DD
= 15V, V
GEN
= 10V,
R
L
= 15Ω, R
G
= 6.0Ω, I
D
= 1A
Rise Time
t
r
⎯
4.50
⎯
Turn-Off Delay Time
t
d
(
off
)
⎯
26.33
⎯
Fall Time
t
f
⎯
8.55
⎯
Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Repetitive rating, pulse width limited by junction temperature.
7. Short duration pulse test used to minimize self-heating effect.
DMN4800LSSL
Document number: DS35016 Rev. 4 - 2
3 of 6
www.diodes.com
November 2013
© Diodes Incorporated
DMN4800LSSL
NEW PRODUCT
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0 5 10 15 20 25 30
Fig. 3 Typical On-Resistan ce
vs. Drain Current and Gate Voltage
I , DRAIN-SOURCE CURRENT (A)
D
R , DRAIN-SOURCE ON-RESISTANCE ( )
DS(ON)
Ω
V = 4.5V
GS
0 0.5 1 1.5 2
0
5
10
15
20
30
I, D
AIN
EN
(A)
D
25
Fig. 1 Typical Output Characteristic
V , DRAIN-SOURCE VOLTAGE (V)
DS
V = 2.0V
GS
V = 3.0V
GS
V = 4.5V
GS
V = 10V
GS
V = 2.5V
GS
I, D
R
AIN
C
U
R
R
EN
T
(A)
D
0
5
10
15
20
25
30
1 1.5 2 2.5 3
Fig. 2 Typical Transfer Characteristic
V , GATE-SOURCE VOLTAGE (V)
GS
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 5V
DS
0
0.01
0.02
0.03
0 5 10 15 20 25 30
I , DRAIN CURRENT (A)
D
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
, D
AI
-S
E
-
ESIS
A
E ( )
DS(ON)
Ω
T = -55°C
A
T = 25°C
A
T = 85°C
A
T = 125°C
A
T = 150°C
A
V = 4.5V
GS
Fig. 5 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
0.6
0.8
1.0
1.2
1.4
1.8
, D
AI
-S
E
ON-RESISTANCE (NORMALIZED)
DSON
1.6
V = 4.5V
I = 10A
GS
D
V = 10V
I = 11.6A
GS
D
0
0.005
0.01
0.015
0.02
0.025
0.03
Fig. 6 On-Resistance Variation with Temperature
-50 -25 0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE (°C)
A
R , DRAIN-SOURCE ON-RESISTANCE ( )
DSON
Ω
V = 10V
I = 11.6A
GS
D
V = 4.5V
I = 10A
GS
D
P1-P3P4-P6

DMN4800LSSL-13

Mfr. #:
Buy DMN4800LSSL-13
Manufacturer:
Diodes Incorporated
Description:
MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
Lifecycle:
New from this manufacturer.
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