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Jantx2N3879

P1-P2
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/526
Devices Qualified Level
2N3879
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Unit
Collector-Emitter Voltage
V
CEO
75 Vdc
Collector-Base Voltage
V
CBO
120 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Base Current I
B
5.0 Adc
Collector Current
I
C
7.0
Adc
Total Power Dissipation @ T
C
= 25
0
C
(1)
P
T
35 W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
5.0
0
C/W
1) Derate linearly 200 mW/
0
C for T
C
> 25
0
C
*See Appendix A for
Package Outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 200 mAdc
V
(BR)
CEO
75 Vdc
Collector-Emitter Cutoff Current
V
CE
= 50 Vdc
I
CEO
5.0 Vdc
Collector-Emitter Cutoff Current
V
CE
= 100 Vdc, V
BE
= 1.5 Vdc
I
CEX
4.0 mAdc
Collector-Base Cutoff Current
V
CB
= 120 Vdc
I
CBO
25 mAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
10 mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-66*
(TO-213AA)
2N3879 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS
(2)
Forward-Current Transfer Ratio
I
C
= 0.5 Adc, V
CE
= 5.0 Vdc
I
C
= 4.0 Adc, V
CE
= 5.0 Vdc
I
C
= 4.0 Adc, V
CE
= 2.0 Vdc
h
FE
40
20
12
80
100
Collector-Emitter Saturation Voltage
I
C
= 4.0 Adc, I
B
= 0.4 Adc
V
CE(sat)
1.2 Vdc
Base-Emitter Saturation Voltage
I
C
= 4.0 Adc, I
B
= 0.4 Adc
V
BE(sat)
2.0 Vdc
Base-Emitter Voltage
I
C
= 4.0 Adc, V
CE
= 2.0 Vdc
V
BE(on)
1.8 Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
I
C
= 500 mAdc, V
CE
= 10 Vdc, f = 10 MHz
h
fe
4.0 20
Output Capacitance
V
CB
= 10 Vdc, I
E
= 0, 0.1 MHz ≤ f ≤ 1.0 MHz
C
obo
175 pF
SWITCHING CHARACTERISTICS
Turn-On Time
V
CC
= 30 Vdc; I
C
= 4.0 Adc; I
B
= 0.4 Adc
t
on
0.44
µs
Turn-Off Time
V
CC
= 30 Vdc; I
C
= 4.0 Adc; I
B
= -I
B
= 0.4 Adc
t
off
1.2
µs
SAFE OPERATING AREA
DC Tests
T
C
= +25
0
C, 1 Cycle, t = 1.0 s
Test 1
V
CE
= 5.0 Vdc, I
C
= 7.0 Adc
Test 2
V
CE
= 28 Vdc, I
C
= 1.25 Adc
Test 3
V
CE
= 40 Vdc, I
C
= 500 mAdc
Test 4
V
CE
= 75 Vdc, I
C
= 100 mAdc
(2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
P1-P2

Jantx2N3879

Mfr. #:
Buy Jantx2N3879
Manufacturer:
Microchip / Microsemi
Description:
Bipolar Transistors - BJT Power BJT
Lifecycle:
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