FCP165N65S3R0
www.onsemi.com
4
TYPICAL PERFORMANCE CHARACTERISTICS
0.0
1E−3
0.01
0.1
1
10
100
I
S
, Reverse Drain Current [A]
V
SD
, Body Diode Forward Voltage [V]
0 1020304050
0.0
0.2
0.4
0.6
R
DS(ON)
,
Drain−Source On−Resistance [
W]
I
D
, Drain Current [A]
0.2
1
10
50
I
D
, Drain Current [A]
V
DS
, Drain−Source Voltage [V]
V
GS
= 10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
*Notes:
1. 250 ms Pulse Test
2. T
C
= 25°C
11020
3
1
10
50
I
D
, Drain Current [A]
V
GS
, Gate−Source Voltage [V]
456789
*Notes:
1. V
DS
= 20 V
2. 250 ms Pulse Test
150°C
25°C
−55°C
Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and Temperature
Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics
*Note: T
C
= 25°C
0.5 1.0 1.5
*Notes:
1. V
GS
= 0 V
2. 250 ms Pulse Test
150°C
25°C
−55°C
V
GS
= 10 V
V
GS
= 20 V
0 10203040
0
2
4
6
8
10
V
GS
, Gate−Source Voltage [V]
Q
g
, Total Gate Charge [nC]
*Note: I
D
= 9.5 A
V
DS
= 130 V
V
DS
= 400 V
0.1 1 10 100 1000
0.1
1
10
100
1000
10000
100000
C
oss
C
iss
C
rss
Capacitances [pF]
V
DS
, Drain−Source Voltage [V]
*Notes:
1. V
GS
= 0 V
2. f = 1 MHz
C
iss
= C
gs
+ C
gd
(C
ds
= Shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
