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DG2519EDQ-T1-GE3

P1-P3P4-P6P7-P9P10-P10
DG2519E
www.vishay.com
Vishay Siliconix
S17-0461-Rev. A, 03-Apr-17
1
Document Number: 78595
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
High-Bandwidth, Low Voltage, Dual SPDT Analog Switches
DESCRIPTION
The DG2519E is monolithic CMOS dual single-pole /
double-throw (SPDT) analog switches. It is specifically
designed for low-voltage, high bandwidth applications.
The DG2519E on-resistance, matching and flatness are
guaranteed over the entire analog voltage range. Wide
dynamic performance is achieved with typical at -61 dB for
both cross-talk and off-isolation at 1 MHz.
Both SPDT’s operate with independent control logic,
conduct equally well in both directions and block signals up
to the power supply level when off. Break-before-make is
guaranteed.
With fast switching speeds, low on-resistance, high
bandwidth, and low charge injection, the DG2519E are
ideally suited for audio and video switching with high
linearity.
Built on Vishay Siliconix’s low voltage CMOS technology,
the DG2519E contain an epitaxial layer which prevents
latch-up
FEATURES
• Single supply (1.8 V to 5.5 V)
• Low on-resistance - R
ON
: 2.5
• Crosstalk and off isolation: -61 dB at 1 MHz
• MSOP-10 and DFN-10 package
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
BENEFITS
• Reduced power consumption
• High accuracy
• Reduce board space
• Low-voltage logic compatible
• High bandwidth
APPLICATIONS
• Cellular phones
• Speaker headset switching
• Audio and video signal routing
• PCMCIA cards
• Low-voltage data acquisition
•ATE
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Notes
a. Signals on NC, NO, COM, IN, or EN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings
b. All leads welded or soldered to PC board
c. Derate 4 mW/°C above 70 °C
d. Derate 14.9 mW/°C above 70 °C
COM1
NC1
V+
1
2
3
10
9
Top view
IN
NO1
GND
8
NC2
COM2
4
5
7
NO2
EN
6
TRUTH TABLE
LOGIC EN NC1 and NC2 NO1 and NO2
0 1 ON OFF
11OFFON
00OFFOFF
10OFFOFF
ORDERING INFORMATION
TEMP. RANGE PACKAGE PART NUMBER
-40 °C to +85 °C
MSOP-10 DG2519EDQ-T1-GE3
DFN-10 DG2519EDN-T1-GE4
ABSOLUTE MAXIMUM RATINGS
PARAMETER LIMIT UNIT
Reference V+ to GND -0.3 to +6
V
IN, COM, NC, NO
a
-0.3 to (V+ + 0.3)
Continuous current (any terminal) ± 50
mA
Peak current (pulsed at 1 ms, 10 % duty cycle) ± 200
Storage temperature (D suffix) -65 to +150 °C
Power dissipation (packages)
b
MSOP-10
c
320
mW
DFN-10
d
1191
ESD / HBM EIA / JESD22-A114-A 7.5k
V
ESD / CDM EIA / JESD22-C101-A 1.5k
Latch up JESD78 300 mA
DG2519E
www.vishay.com
Vishay Siliconix
S17-0461-Rev. A, 03-Apr-17
2
Document Number: 78595
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
IN
= V+ voltage to perform proper function
f. Crosstalk measured between channels
g. Guarantee by 5 V testing
SPECIFICATIONS (V+ = 3 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 3 V, ± 10 %, V
IN/ENL
= 0.4 V, V
IN/ENH
= 1.5 V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
c
TYP.
b
MAX.
c
Analog Switch
Analog signal range
d
V
ANALOG
Full 0 - V+ V
Drain-source on-resistance R
DS(on)
V+ = 1.8 V, V
NC/NO
= 0.4 V / V+, I
NC/NO
= 8 mA
Room - 7 11
Full - - 13
V+ = 2.7 V, V
COM
= 0.8 V / 1.8 V, I
COM
= 10 mA
Room - 4.6 5.5
Full - - 6.5
On-resistance matching R
DS(on)
V+ = 2.7 V, V
COM
= 0.8 V / 1.4 V / 1.8 V,
I
COM
= 10 mA
Room - 0.02 0.3
Full - - 0.6
On-resistance flatness
d, f
R
flat(on)
Room - 0.62 1.1
Full - - 1.5
Off leakage current
g
I
NC/NO(off)
V+ = 3.6 V, V
NC/NO
= 1 V / 3.2 V,
V
COM
= 3.2 V / 1 V, V
EN
= 0 V
Room -1 0.01 1
nA
Full -5 - 5
COM off leakage current
g
I
COM(off)
Room -1 0.01 1
Full -5 - 5
Channel-on leakage
current
g
I
COM(on)
V+ = 3.3 V, V
COM
= V
NC/NO
= 1 V / 3.2 V
Room -1 0.01 1
Full -5 - 5
Digital Control
Input current
d
I
INL
or I
INH
Full -1 - 1 μA
Input high voltage
d
V
INH
Full 1.5 - -
V
Input low voltage
d
V
INL
Full - - 0.4
Digital input capacitance
d
C
IN
Room - 3 - pF
Dynamic Characteristics
Turn-on time t
ON
V
NC/NO
= 3 V, C
L
= 35 pf, R
L
= 300
Room - 21 45
ns
Full - - 50
Turn-off time t
OFF
Room - 11 35
Full - - 45
Break-before-make time
d
t
BBM
Room 3 13 -
Full 2 - -
Charge injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 1.5 V, R
gen
= 0 Room - -10.2 - pC
Bandwidth
d
BW C
L
= 5 pF (set up capacitance) Room - 222 - MHz
Off-isolation
d
OIRR R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -58 -
dB
f = 10 MHz Room - -47 -
Channel-to-channel crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -57 -
f = 10 MHz Room - -47 -
NO, NC Off capacitance
d
C
NO(off)
V+ = 2.7 V, f = 1 MHz
Room - 7 -
pF
C
NC(off)
Room - 7 -
Channel-on capacitance
d
C
NO(on)
Room - 24 -
C
NC(on)
Room - 24 -
Power Supply
Power supply range V+ 2.7 - 3.3 V
Power supply current
d
I+ V+ = 2.7 V, V
IN
= 0 V or 2.7 V Full - - 1 μA
DG2519E
www.vishay.com
Vishay Siliconix
S17-0461-Rev. A, 03-Apr-17
3
Document Number: 78595
For technical questions, contact: analogswitchtechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Room = 25 °C, Full = as determined by the operating suffix
b. Typical values are for design aid only, not guaranteed nor subject to production testing
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet
d. Guarantee by design, not subjected to production test
e. V
IN
= input voltage to perform proper function
f. Difference of min and max values
g. Guaranteed by 5 V testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 5 V)
PARAMETER SYMBOL
TEST CONDITIONS
OTHERWISE UNLESS SPECIFIED
V+ = 5 V, ± 10 %, V
IN/ENL
= 0.5 V, V
IN/ENH
= 2
V
e
TEMP.
a
LIMITS
-40 °C to +85 °C
UNIT
MIN.
c
TYP.
b
MAX.
c
Analog Switch
Analog signal ranged V
ANALOG
Full 0 - V+ V
Drain-source on-resistance R
DS(on)
V+ = 4.5 V, V
COM
= 0.8 V / 3.5 V; I
COM
= 10 mA
Room - 2.5 3.1
Full - - 4
On-resistance matching R
DS(on)
V+ = 4.5 V, V
COM
= 0.8 V / 2.5 V / 3.5 V,
I
COM
= 10 mA
Room - 0.01 0.4
Full - - 0.5
On-resistance flatness
d, f
R
flat(on)
Room - 0.61 1
Full - - 1.5
Off leakage current
g
I
NC/NO(off)
V+ = 5.5 V, V
NC/NO
= 1 V / 4.5 V,
V
COM
= 4.5 V / 1 V, V
EN
= 0 V
Room -2 0.16 2
nA
Full -10 - 10
COM off leakage current
g
I
COM(off)
Room -2 0.20 2
Full -10 - 10
Channel-on leakage current
g
I
COM(on)
V+ = 5.5 V, V
COM
= V
NC/NO
= 1 V / 4.5 V
Room -2 0.20 2
Full -10 - 10
Power down leakage
d
I
PD
V+ = 0 V, V
COM
= 5.5 V, NC/NO open Full - 0.01 5 μA
V+ = 0 V, V
NC/NO
= 5.5 V,
COM, open
Full - 0.01 3 mA
Digital Control
Input current
d
I
INL
or I
INH
Full -1 - 1 μA
Input high voltage
d
V
INH
Full 2 - -
V
Input low voltage
d
V
INL
Full - - 0.5
Digital input capacitance
d
C
IN
Room - 3 - pF
Dynamic Characteristics
Turn-on time t
ON
V
NC/NO
= 3 V, C
L
= 35 pf, R
L
= 300
Room - 14 40
ns
Full - - 43
Turn-off time t
OFF
Room - 7 33
Full - - 35
Break-before-make time
d
t
BBM
Room 3 8 -
Full 2 - -
Propagation delay
d
tpd V+ = 5 V, no R
L
Room - 325 - ps
Charge injection
d
Q
INJ
C
L
= 1 nF, V
gen
= 2.5 V, R
gen
= 0 Room - -14 - pC
Bandwidth
d
BW C
L
= 5 pF (set up capacitance) Room - 217 - MHz
Off-isolation
d
OIRR R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -61 -
dB
f = 10 MHz Room - -48 -
Channel-to-channel
crosstalk
d
X
TALK
R
L
= 50 , C
L
= 5 pF
f = 1 MHz Room - -61 -
f = 10 MHz Room - -48 -
NO, NC Off capacitance
d
C
NO(off)
V+ = 5 V, f = 1 MHz
Room - 7 -
pF
C
NC(off)
Room - 7 -
Channel-On capacitance
d
C
NO(on)
Room - 24 -
C
NC(on)
Room - 24 -
Power Supply
Power supply range V+ 4.5 - 5.5 V
Power supply current
d
I+ V+ = 5.5 V, V
IN
= 0 V or 5.5 V Full - - 1 μA
P1-P3P4-P6P7-P9P10-P10

DG2519EDQ-T1-GE3

Mfr. #:
Buy DG2519EDQ-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
Analog Switch ICs High Band Low Volt Dual SPDT
Lifecycle:
New from this manufacturer.
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