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STTH1R02ZF

P1-P3P4-P6P7-P8
February 2017
DocID030263 Rev 1
1/8
This is information on a product in full production.
www.st.com
STTH1R02ZF
Ultrafast rectifier
Datasheet - production data
Features
Very low conduction losses
High surge capability
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
ECOPACK
®
2 compliant component
Surface mount miniature packages
Description
The STTH1R02ZF is an ultrafast recovery
rectifier used for energy recovery in switched
mode power supplies, switching mode base drive
and transistor circuits. Packaged in SOD123Flat,
this device is intended for use in low voltage, high
frequency inverters, free-wheeling and polarity
protection.
The compromise between forward voltage drop
and recovery time offers optimized performances.
Table 1: Device summary
Symbol
I
F(AV)
1 A
V
RRM
200 V
T
j
(max.)
175 °C
V
F
(typ.)
0.75 V
t
rr
(typ.)
25 ns
K
A
SOD123Flat
A
K
Characteristics
STTH1R02ZF
2/8
DocID030263 Rev 1
1 Characteristics
Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
V
RRM
Repetitive peak reverse voltage
200
V
I
F(AV)
Average forward current
T
lead
= 153 °C , δ = 0.5 square wave
1
A
I
FSM
Surge non repetitive forward
current
t
p
= 10 ms sinusoidal
25
A
T
stg
Storage temperature range
-65 to +175
°C
T
j
Maximum operating junction temperature
+175
°C
Table 3: Thermal parameter
Symbol
Parameter
Maximum
Unit
R
th(j-l)
Junction to lead
23
°C/W
Table 4: Static electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-
0.5
µA
T
j
= 125 °C
-
1
10
µA
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 1 A
-
0.87
1.00
V
T
j
= 125 °C
-
0.75
0.85
Notes:
(1)
Pulse test: t
p
= 5 ms, δ < 2%
(2)
Pulse test: t
p
= 380 µs, δ < 2%
To evaluate the conduction losses, use the following equation:
P = 0.75 x I
F(AV)
+ 0.1 x I
F
2
(RMS)
Table 5: Dynamic electrical characteristics
Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Unit
t
rr
Reverse recovery time
I
F
= 1 A
dI
F
/dt = 50 A/μs
V
R
= 30 V
T
j
= 25 °C
-
25
32
ns
I
F
= 1 A
dI
F
/dt = 100 A/μs
V
R
= 160 V
T
j
= 125 °C
-
30
I
RM
Reverse recovery current
-
2.2
A
Q
rr
Reverse recovery charges
-
34
nC
STTH1R02ZF
Characteristics
DocID030263 Rev 1
3/8
1.2 Characteristics (curves)
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Forward voltage drop versus forward
current (typical values)
Figure 3: Forward voltage drop versus forward
current (maximum values)
Figure 4: Relative variation of thermal impedance
junction to lead versus pulse duration
Figure 5: Peak reverse recovery current versus
dI
F
/ dt (typical values)
Figure 6: Reverse recovery charges versus dI
F
/ dt
(typical values)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.0 0.2 0.4 0.6 0.8 1.0 1.2
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
δ = 1
P
F(AV)
(W)
I
F(AV)
(A)
T
δ= tp/T
tp
0.01
0.10
1.00
10.00
0.0 0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6
I
F
(A)
V
F
(V)
T
j
= 25 °C
T
j
= 125 °C
0.01
0.10
1.00
10.00
0.0 0.2 0.4
0.6
0.8 1.0 1.2 1.4 1.6 1.8
I
F
(A)
V
F
(V)
T
j
= 25 °C
T
j
= 125 °C
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
t
P
(s)
Single pulse
Z
th(j-l)
/R
th(j-l)
0
1
2
3
4
5
6
0 100 200 300 400 500
I
RM
(A)
dl
F
/dt (A/µs)
I
F
= 1A
V
R
= 160 V
T
j
= 125 °C
0
20
40
60
80
0 100 200 300 400 500
Q
rr
(nC)
dl
F
/dt (A/µs)
I
F
= 1A
V
R
= 160 V
T
j
= 125 °C
P1-P3P4-P6P7-P8

STTH1R02ZF

Mfr. #:
Buy STTH1R02ZF
Manufacturer:
STMicroelectronics
Description:
Rectifiers Ultrafast rectifier
Lifecycle:
New from this manufacturer.
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