Symbol Min Typ Max Units
500
600
BV
DSS
0.4
V/
o
C
1
10
I
GSS
±100 nA
V
GS(th)
Gate Threshold Voltage
3 4.1 5 V
R
DS(ON)
1.1 1.4
Ω
g
FS
2.5 S
V
SD
0.78 1 V
I
S
3 A
I
SM
12 A
C
iss
662 pF
C
oss
26 pF
C
o(er)
19 pF
C
o(tr)
35 pF
C
rss
9.7 pF
R
g
3 Ω
Q
g
12 25 nC
Q
gs
3.4 nC
Q
gd
4.4 nC
t
D(on)
21 ns
t
r
28 ns
t
D(off)
32 ns
t
f
21 ns
t
rr
260 ns
Q
rr
2.3
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Gate-Body leakage current
V
GS
=10V, V
DS
=400V, I
D
=3A
Total Gate Charge
Gate Source Charge
Gate Drain Charge
SWITCHING PARAMETERS
µA
V
DS
=400V, T
J
=125°C
Maximum Body-Diode Pulsed Current
C
Effective output capacitance, energy
related
I
Effective output capacitance, time
related
J
V
GS
=0V, V
DS
=100V, f=1MHz
V
GS
=0V, V
DS
=0 to 400V, f=1MHz
V
DS
=0V, V
GS
=±30V
Breakdown Voltage Temperature
Coefficient
I
D
=250µA, V
GS
=0V
I
DSS
Zero Gate Voltage Drain Current
V
DS
=500V, V
GS
=0V
V
DS
=5V
,
I
D
=250µA
Output Capacitance
Forward Transconductance
I
S
=1A,V
GS
=0V
BV
DSS
Drain-Source Breakdown Voltage
I
D
=250µA, V
GS
=0V, T
J
=25°C
V
I
D
=250µA, V
GS
=0V, T
J
=150°C
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
V
GS
=10V, I
D
=2.2A
V
GS
=0V, V
DS
=100V, f=1MHz
Maximum Body-Diode Continuous Current
Input Capacitance
Diode Forward Voltage
DYNAMIC PARAMETERS
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
Turn-On Rise Time
Turn-On DelayTime
V
DS
=40V, I
D
=1.5A
Gate resistance f=1MHz
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
I
F
=3A,dI/dt=100A/µs,V
DS
=100V
Turn-Off DelayTime
Turn-Off Fall Time
V
GS
=10V, V
DS
=250V, I
D
=3A,
R
G
=25Ω
A. The value of R
qJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
D. The R
qJA
is the sum of the thermal impedance from junction to case R
qJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of T
J(MAX)
=150°C.
G.These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C.
H. L=60mH, I
AS
=2.25A, V
DD
=150V, R
G
=10Ω, Starting T
J
=25°C.
I. C
o(er)
is a fixed capacitance that gives the same stored energy as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
J. C
o(tr)
is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
(BR)DSS.
Rev.1.0: January 2014 www.aosmd.com Page 2 of 6
