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IRL540NSTRR

P1-P3P4-P6P7-P9P10-P11
IRL540NS/L
HEXFET
®
Power MOSFET
PD -91535
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
S
D
G
V
DSS
= 100V
R
DS(on)
= 0.044Ω
I
D
= 36A
Description
5/13/98
Parameter Typ. Max. Units
R
θJC
Junction-to-Case ––– 1.1
R
θJA
Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40
Thermal Resistance
°C/W
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 36
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 26 A
I
DM
Pulsed Drain Current  120
P
D
@T
A
= 25°C Power Dissipation 3.8 W
P
D
@T
C
= 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
V
GS
Gate-to-Source Voltage ± 16 V
E
AS
Single Pulse Avalanche Energy 310 mJ
I
AR
Avalanche Current 18 A
E
AR
Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt  5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
°C
Absolute Maximum Ratings
2
D Pak
TO-262
l Advanced Process Technology
l Surface Mount (IRL540NS)
l Low-profile through-hole (IRL540NL)
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
IRL540NS/L
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode)
––– –––
showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) 
––– –––
p-n junction diode.
V
SD
Diode Forward Voltage ––– ––– 1.3 V T
J
= 25°C, I
S
= 18A, V
GS
= 0V 
t
rr
Reverse Recovery Time ––– 190 290 ns T
J
= 25°C, I
F
= 18A
Q
rr
Reverse RecoveryCharge ––– 1.1 1.7 µC di/dt = 100A/µs

t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Starting T
J
= 25°C, L = 1.9mH
R
G
= 25Ω, I
AS
= 18A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
I
SD
≤ 18A, di/dt ≤ 180A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL540N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
S
D
G
Source-Drain Ratings and Characteristics
36
120
A
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 100 ––– ––– V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.044 V
GS
= 10V, I
D
= 18A
––– ––– 0.053 Ω V
GS
= 5.0V, I
D
= 18A
––– ––– 0.063 V
GS
= 4.0V, I
D
= 15A
V
GS(th)
Gate Threshold Voltage 1.0 ––– 2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 14 ––– ––– S V
DS
= 25V, I
D
= 18A
––– ––– 25 V
DS
= 100V, V
GS
= 0V
––– ––– 250 V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage ––– ––– 100
nA
V
GS
= 16V
Gate-to-Source Reverse Leakage ––– ––– -100 V
GS
= -16V
Q
g
Total Gate Charge ––– ––– 74 I
D
= 18A
Q
gs
Gate-to-Source Charge ––– ––– 9.4 nC V
DS
= 80V
Q
gd
Gate-to-Drain ("Miller") Charge ––– ––– 38 V
GS
= 5.0V, See Fig. 6 and 13 
t
d(on)
Turn-On Delay Time ––– 11 ––– V
DD
= 50V
t
r
Rise Time ––– 81 ––– I
D
= 18A
t
d(off)
Turn-Off Delay Time ––– 39 ––– R
G
= 5.0Ω, V
GS
= 5.0V
t
f
Fall Time ––– 62 ––– R
D
= 2.7Ω, See Fig. 10 
Between lead,
––– –––
and center of die contact
C
iss
Input Capacitance ––– 1800 ––– V
GS
= 0V
C
oss
Output Capacitance ––– 350 ––– pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
nH
I
GSS
R
DS(on)
Static Drain-to-Source On-Resistance
L
S
Internal Source Inductance 7.5
ns
I
DSS
Drain-to-Source Leakage Current
A
IRL540NS/L
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
A
20
µ
s PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Volta
g
e
(
V
)
DS
A
20
µ
s PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
1
10
100
1000
246810
T = 25°C
J
GS
V , Gate-to-Source Volta
g
e (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 50V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 30A
D
P1-P3P4-P6P7-P9P10-P11

IRL540NSTRR

Mfr. #:
Buy IRL540NSTRR
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 36A D2PAK
Lifecycle:
New from this manufacturer.
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