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LET9060

P1-P3P4-P6P7-P9P10-P11
Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
February 2011 Doc ID 010019 Rev 1 1/11
11
LET9060
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 60 W with 17.2 dB gain @ 960 MHz /
28 V
■ New RF plastic package
Description
The LET9060 is a common source N-channel,
enhancement-mode lateral field-effect RF power
MOSFET. It is designed for high gain, broadband,
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. LET9060 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
LET9060’s superior linearity performance makes
it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order codes Packages Marking Packaging
LET9060 PowerSO-10RF (formed lead) LET9060 Tube
LET9060S PowerSO-10RF (straight lead) LET9060S Tube
LET9060TR PowerSO-10RF (formed lead) LET9060 Tape and reel
LET9060STR PowerSO-10RF (straight lead) LET9060S Tape and reel
www.st.com
Maximum ratings LET9060
2/11 Doc ID 010019 Rev 1
1 Maximum ratings
T
CASE
= 25 °C.
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
(BR)DSS
Drain-source voltage 80 V
V
GS
Gate-source voltage -0.5 to +15 V
I
D
Drain current 12 A
P
DISS
Power dissipation (@ T
C
= 70 °C) 95 W
T
J
Max. operating junction temperature 165 °C
T
STG
Storage temperature -65 to +150 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Junction-case thermal resistance 1.0 °C/W
LET9060 Electrical characteristics
Doc ID 010019 Rev 1 3/11
2 Electrical characteristics
T
C
= 25 °C
Table 4. Static
Symbol Test conditions Min. Typ. Max. Unit
V
(BR)DSS
V
GS
= 0 V; I
DS
= 10 mA 80 V
I
DSS
V
GS
= 0 V; V
DS
= 28 V 1 µA
I
GSS
V
GS
= 5 V; V
DS
= 0 V 1 µA
V
GS(Q)
V
DS
= 28 V; I
D
= 100 mA 2.0 5.0 V
V
DS(ON)
V
GS
= 10 V; I
D
= 3 A 0.8 1.2 V
G
FS
V
DS
= 10 V; I
D
= 3 A 2.5 mho
C
ISS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 77 pF
C
OSS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 39 pF
C
RSS
V
GS
= 0 V; V
DS
= 28 V; f = 1 MHz 1.2 pF
Table 5. Dynamic
Symbol Test conditions Min. Typ. Max. Unit
P
OUT
V
DD
= 28 V; I
DQ
= 300 mA; f = 960 MHz 60 80 - W
G
PS
V
DD
= 28 V; I
DQ
= 300 mA; P
OUT
= 60 W; f = 960 MHz 16 17.2 - dB
η
D
V
DD
= 28 V; I
DQ
= 300 mA; P
IN
= 2 W; f = 960 MHz 60 70 - %
Load
mismatch
V
DD
= 28 V; I
DQ
= 300 mA; P
OUT
= 60 W; f = 960 MHz
All phase angles
20:1 VSWR
Table 6. ESD protection characteristics
Test conditions Class
Human body model 2
Machine model M3
Table 7. Moisture sensitivity level
Test conditions Rating
J-STD-020B MSL 3
P1-P3P4-P6P7-P9P10-P11

LET9060

Mfr. #:
Buy LET9060
Manufacturer:
STMicroelectronics
Description:
RF MOSFET Transistors RF PWR Trans LdmoST N-Ch 28V 1GHz ESD
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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