Preliminary data
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
February 2011 Doc ID 010019 Rev 1 1/11
11
LET9060
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P
OUT
= 60 W with 17.2 dB gain @ 960 MHz /
28 V
■ New RF plastic package
Description
The LET9060 is a common source N-channel,
enhancement-mode lateral field-effect RF power
MOSFET. It is designed for high gain, broadband,
commercial and industrial applications. It
operates at 28 V in common source mode at
frequencies of up to 1 GHz. LET9060 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
LET9060’s superior linearity performance makes
it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Figure 1. Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
Table 1. Device summary
Order codes Packages Marking Packaging
LET9060 PowerSO-10RF (formed lead) LET9060 Tube
LET9060S PowerSO-10RF (straight lead) LET9060S Tube
LET9060TR PowerSO-10RF (formed lead) LET9060 Tape and reel
LET9060STR PowerSO-10RF (straight lead) LET9060S Tape and reel
www.st.com