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SD101BW-G3-18

P1-P3P4-P4
SD101AW-G, SD101BW-G, SD101CW-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
1
Document Number: 85158
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-123
Weight: approx. 9.4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATRUES
• For general purpose applications
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guardring
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Note
(1)
Valid provided that electrodes are kept at ambient temperature
PARTS TABLE
PART ORDERING CODE
INTERNAL
CONSTRUCTION
TYPE MARKING REMARKS
SD101AW-G
SD101AW-G3-08 or SD101AW-G3-18 Single diode SK
Tape and reelSD101BW-G
SD101BW-G3-08 or SD101BW-G3-18 Single diode SL
SD101CW-G
SD101CW-G3-08 or SD101CW-G3-18 Single diode SM
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
SD101AW-G V
RRM
60 V
SD101BW-G V
RRM
50 V
SD101CW-G V
RRM
40 V
Power dissipation (infinite heatsink)
(1)
P
tot
400 mW
Forward continuous current I
F
30 mA
Maximum single cycle surge 10 μs square wave I
FSM
2A
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
(1)
R
thJA
300 K/W
Junction temperature
(1)
T
j
125 °C
Storage temperature range T
stg
- 65 to + 150 °C
Operating ttemperature range T
op
- 55 to + 125 °C
SD101AW-G, SD101BW-G, SD101CW-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
2
Document Number: 85158
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
Fig. 2 - Typical Forward Conduction Curve
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
Fig. 4 - Typical Capacitance Curve as a Function of Reverse
Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Reverse breakdown voltage I
R
= 10 μA
SD101AW-G V
(BR)
60 V
SD101BW-G V
(BR)
50 V
SD101CW-G V
(BR)
40 V
Leakage current
V
R
= 50 V SD101AW-G I
R
200 nA
V
R
= 40 V SD101BW-G I
R
200 nA
V
R
= 30 V SD101CW-G I
R
200 nA
Forward voltage drop
I
F
= 1 mA
SD101AW-G V
F
410 mV
SD101BW-G V
F
400 mV
SD101CW-G V
F
390 mV
I
F
= 15 mA
SD101AW-G V
F
1000 mV
SD101BW-G V
F
950 mV
SD101CW-G V
F
900 mV
Diode capacitance V
R
= 0 V, f = 1 MHz
SD101AW-G C
D
2pF
SD101BW-G C
D
2.1 pF
SD101CW-G C
D
2.2 pF
Reverse recovery time I
F
= I
R
= 5 mA, recover to 0.1 I
R
t
rr
1ns
0.01
0.1
1
10
0 0.4 0.6 0.8 1.00.2
A
B
C
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
18477
A
B
C
0 0.4 0.6 0.8 1.00.2
60
20
80
40
0
100
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
18478
100
10
1
0.1
0.01
10 20 30 40050
75 °C
50 °C
25 °C
125 °C
100 °C
V
R
- Reverse Voltage (V)
I - Reverse Current (µA)
R
18479
18480
10 20 30 400
0
1.0
1.2
1.4
1.6
1.8
2.0
0.6
0.8
0.2
0.4
50
T
j
= 25 °C
CBA
C - Typical Capacitance (pF)
D
V
R
- Reverse Voltage (V)
SD101AW-G, SD101BW-G, SD101CW-G
www.vishay.com
Vishay Semiconductors
Rev. 1.0, 25-Feb-13
3
Document Number: 85158
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): SOD-123
0.1 (0.004) max.
2.85 (0.112)
2.55 (0.100)
3.85 (0.152)
3.55 (0.140)
1.7 (0.067)
1.40 (0.055)
Mounting Pad Layout
2.5 (0.098)
0.85 (0.033) 0.85 (0.033)
0.85 (0.033)
Cathode bar
0.65 (0.026)
0.45 (0.018)
0.10 (0.004)
1 (0.039)
0.15 (0.006)
1.35 (0.053)
0.2 (0.008)
0° to 8°
0.45 (0.018)
0.25 (0.010)
0.5 (0.020) ref.
Rev. 4 - Date: 24. Sep. 2009
Document no.: S8-V-3910.01-001 (4)
17432
P1-P3P4-P4

SD101BW-G3-18

Mfr. #:
Buy SD101BW-G3-18
Manufacturer:
Vishay
Description:
Schottky Diodes & Rectifiers 30mA 50Volt 2A IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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