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ATF-331M4-TR1

P1-P3P4-P6P7-P9P10-P12P13-P15
7
Figure 19. MSG/MAG and |S
21
|
2
vs. Frequency at 3V,
40 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG and |S
21
|
2
(dB)
02010515
40
30
20
10
0
-10
|S
21
|
2
ATF-331M4 Typical Scattering Parameters, V
DS
= 3V, I
DS
= 40 mA
Freq.
GHz
S11 S21 S12 S22
MSG/MAG
dB Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 0.82 -90.50 22.45 13.27 128.40 -27.54 0.042 53.80 0.38 -155.50 24.99
0.8 0.78 -117.70 19.31 9.24 113.30 -25.35 0.054 47.10 0.44 -165.77 22.33
1.0 0.77 -130.90 18.50 8.41 106.40 -24.58 0.059 45.10 0.46 -170.63 21.54
1.5 0.75 -150.40 15.23 5.77 93.93 -22.97 0.071 43.03 0.49 180.17 19.10
1.8 0.74 -158.70 14.02 5.02 88.30 -21.94 0.080 42.33 0.49 -184.17 17.98
2.0 0.74 -162.70 13.79 4.89 85.10 -21.51 0.084 42.13 0.50 173.27 17.65
2.5 0.72 -170.00 10.81 3.47 77.97 -20.18 0.098 41.53 0.50 166.80 15.49
3.0 0.69 -174.10 9.60 3.02 71.63 -18.24 0.122 40.67 0.52 163.70 13.92
4.0 0.71 163.70 7.13 2.27 53.03 -17.33 0.136 30.70 0.52 139.43 11.20
5.0 0.73 150.50 5.46 1.87 41.40 -16.83 0.144 25.67 0.52 136.10 9.63
6.0 0.71 141.50 4.37 1.65 28.50 -16.31 0.153 18.13 0.54 118.23 8.02
7.0 0.73 124.40 3.34 1.47 14.10 -15.55 0.167 8.10 0.54 111.83 7.28
8.0 0.74 113.40 3.14 1.44 6.00 -15.19 0.174 3.57 0.54 110.90 7.28
9.0 0.76 98.20 2.94 1.40 -5.57 -15.14 0.175 -4.97 0.55 95.33 7.05
10.0 0.79 84.10 2.33 1.31 -19.10 -14.94 0.179 -16.07 0.55 80.50 6.83
11.0 0.86 62.40 0.44 1.05 -33.40 -14.94 0.179 -28.27 0.55 67.80 6.40
12.0 0.87 62.50 -0.38 0.96 -38.90 -14.47 0.189 -32.20 0.61 61.73 6.00
13.0 0.88 52.30 -1.20 0.87 -50.90 -14.99 0.178 -42.87 0.66 50.97 5.55
14.0 0.89 44.90 -1.79 0.81 -60.20 -15.55 0.167 -50.87 0.70 41.63 5.33
15.0 0.91 39.00 -3.64 0.66 -69.10 -15.81 0.162 -59.03 0.73 32.17 4.81
16.0 0.93 33.40 -5.30 0.54 -76.40 -18.64 0.117 -65.67 0.76 26.13 4.49
17.0 0.93 28.50 -5.40 0.54 -82.40 -17.79 0.129 -71.87 0.78 19.77 4.48
18.0 0.92 25.10 -6.34 0.48 -86.10 -17.92 0.127 -76.40 0.80 14.87 3.39
Notes:
1. The Fmin values are based on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, V
DS
= 3V, I
DS
= 40 mA
Freq
GHz
F
min
dB
opt
Mag.
opt
Ang. R
n/50
G
a
dB
0.50 0.37 0.377 0.7 0.07 21.42
0.90 0.41 0.367 24.5 0.06 18.53
1.00 0.42 0.366 31.1 0.06 18.28
1.50 0.46 0.365 61.6 0.05 15.95
1.80 0.49 0.37 77.8 0.05 15.42
2.00 0.51 0.374 87.9 0.05 14.61
2.50 0.55 0.392 110.5 0.04 13.33
3.00 0.59 0.416 129.6 0.04 12.25
4.00 0.68 0.479 159.2 0.03 10.5
5.00 0.77 0.553 179.4 0.02 9.06
6.00 0.86 0.627 -167.2 0.02 8.05
7.00 0.95 0.69 -157.6 0.04 7.13
8.00 1.04 0.733 -149.2 0.06 6.38
9.00 1.13 0.742 -139.1 0.1 5.97
10.00 1.22 0.709 -124.7 0.18 5
8
Figure 20. MSG/MAG and |S
21
|
2
vs. Frequency at 3V,
60 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG and |S
21
|
2
(dB)
02010515
40
30
20
10
0
-10
|S
21
|
2
ATF-331M4 Typical Scattering Parameters, V
DS
= 3V, I
DS
= 60 mA
Freq.
GHz
S11 S21 S12 S22
MSG/MAG
dB Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 0.81 -93.60 22.93 14.01 127.00 -28.64 0.037 54.00 0.39 -167.20 25.78
0.8 0.78 -120.70 19.68 9.64 112.10 -26.56 0.047 48.30 0.46 -172.07 23.12
1.0 0.77 -133.60 18.81 8.72 105.40 -25.68 0.052 46.80 0.48 -175.73 22.24
1.5 0.75 -152.50 15.50 5.96 93.43 -23.88 0.064 46.03 0.51 176.57 19.69
1.8 0.74 -160.50 14.27 5.17 88.00 -22.73 0.073 45.93 0.51 172.73 18.50
2.0 0.74 -164.40 14.02 5.02 84.80 -22.16 0.078 46.03 0.52 170.47 18.09
2.5 0.72 -171.30 11.06 3.57 77.97 -20.72 0.092 45.93 0.52 164.60 15.89
3.0 0.70 -175.30 9.80 3.09 71.93 -18.40 0.120 45.37 0.53 161.90 14.10
4.0 0.71 162.70 7.39 2.34 53.33 -17.52 0.133 35.20 0.54 137.43 11.21
5.0 0.73 149.70 5.70 1.93 41.90 -16.95 0.142 29.87 0.54 134.20 9.70
6.0 0.71 140.60 4.61 1.70 29.10 -16.31 0.153 21.73 0.55 116.23 8.18
7.0 0.73 123.70 3.54 1.50 15.10 -15.55 0.167 11.40 0.56 110.13 7.39
8.0 0.74 112.70 3.33 1.47 7.10 -15.09 0.176 6.37 0.56 109.10 7.35
9.0 0.76 97.60 3.12 1.43 -4.37 -15.04 0.177 -2.77 0.57 93.43 7.16
10.0 0.79 83.40 2.52 1.34 -17.80 -14.75 0.183 -14.27 0.57 78.70 6.95
11.0 0.86 61.80 0.66 1.08 -32.10 -14.80 0.182 -26.87 0.57 66.20 6.68
12.0 0.87 62.00 -0.15 0.98 -37.60 -14.29 0.193 -31.00 0.63 60.03 6.21
13.0 0.88 52.00 -0.96 0.90 -49.50 -14.80 0.182 -41.97 0.68 49.47 5.74
14.0 0.89 44.50 -1.56 0.84 -58.70 -15.34 0.171 -50.27 0.71 40.23 5.55
15.0 0.92 38.80 -3.38 0.68 -67.60 -15.65 0.165 -58.43 0.74 30.87 5.16
16.0 0.94 33.20 -5.04 0.56 -74.90 -18.42 0.120 -65.47 0.77 25.03 4.92
17.0 0.94 28.20 -5.15 0.55 -80.90 -17.65 0.131 -71.67 0.78 18.87 4.96
18.0 0.93 24.60 -6.11 0.50 -84.90 -17.79 0.129 -76.30 0.80 14.17 3.76
Notes:
1. The Fmin values are based on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, V
DS
= 3V, I
DS
= 60 mA
Freq
GHz
F
min
dB
opt
Mag.
opt
Ang. R
n/50
G
a
dB
0.50 0.36 0.35 0.2 0.06 21.97
0.90 0.4 0.341 24.3 0.06 18.96
1.00 0.41 0.34 31.1 0.05 18.77
1.50 0.45 0.341 62.5 0.04 16.31
1.80 0.48 0.346 79.3 0.05 15.79
2.00 0.5 0.351 89.6 0.05 14.93
2.50 0.54 0.37 112.8 0.04 13.67
3.00 0.59 0.395 132.4 0.04 12.62
4.00 0.68 0.461 162.3 0.03 10.78
5.00 0.77 0.538 -177.6 0.02 9.28
6.00 0.86 0.616 -164.4 0.02 8.34
7.00 0.95 0.683 -155.3 0.04 7.37
8.00 1.04 0.729 -147.2 0.07 6.63
9.00 1.13 0.742 -137.3 0.11 6.19
10.00 1.22 0.712 -122.6 0.19 5.23
9
Figure 21. MSG/MAG and |S
21
|
2
vs. Frequency at 4V,
40 mA.
MSG
MAG
FREQUENCY (GHz)
MSG/MAG and |S
21
|
2
(dB)
02010515
40
30
20
10
0
-10
|S
21
|
2
ATF-331M4 Typical Scattering Parameters, V
DS
= 4V, I
DS
= 40 mA
Freq.
GHz
S11 S21 S12 S22
MSG/MAG
dB Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang.
0.5 0.82 -89.80 22.59 13.48 128.80 -27.54 0.042 54.00 0.36 -149.40 25.06
0.8 0.78 -116.90 19.49 9.43 113.60 -25.51 0.053 47.30 0.41 -162.57 22.50
1.0 0.77 -130.00 18.68 8.59 106.60 -24.73 0.058 45.20 0.43 -167.93 21.70
1.5 0.75 -149.70 15.42 5.90 94.13 -22.97 0.071 42.93 0.46 -177.83 19.20
1.8 0.74 -158.00 14.21 5.13 88.40 -22.05 0.079 42.23 0.46 177.53 18.13
2.0 0.74 -162.20 13.70 4.84 85.10 -21.51 0.084 41.93 0.47 174.77 17.61
2.5 0.72 -169.50 11.50 3.76 77.87 -20.26 0.097 41.33 0.48 168.10 15.88
3.0 0.69 -173.80 10.20 3.24 71.53 -18.20 0.123 40.47 0.49 164.80 14.20
4.0 0.70 164.10 7.34 2.33 52.63 -17.46 0.134 30.50 0.50 140.63 11.39
5.0 0.73 150.90 5.66 1.92 40.90 -16.95 0.142 25.67 0.50 137.60 9.81
6.0 0.71 141.80 4.54 1.69 28.00 -16.42 0.151 18.43 0.51 120.43 8.14
7.0 0.73 124.70 3.52 1.50 13.40 -15.65 0.165 8.40 0.52 113.63 7.45
8.0 0.74 113.70 3.29 1.46 5.20 -15.29 0.172 4.07 0.52 112.80 7.42
9.0 0.76 98.50 3.08 1.43 -6.37 -15.29 0.172 -4.27 0.53 97.33 7.18
10.0 0.79 84.30 2.45 1.33 -20.00 -15.04 0.177 -15.27 0.53 82.40 6.94
11.0 0.86 62.60 0.59 1.07 -34.50 -15.04 0.177 -27.37 0.53 69.40 6.64
12.0 0.87 62.70 -0.26 0.97 -40.00 -14.56 0.187 -31.00 0.59 63.63 6.29
13.0 0.88 52.60 -1.08 0.88 -52.10 -15.09 0.176 -41.67 0.64 52.57 5.80
14.0 0.89 45.10 -1.66 0.83 -61.60 -15.55 0.167 -49.77 0.69 43.13 5.59
15.0 0.92 39.20 -3.49 0.67 -70.50 -15.81 0.162 -58.03 0.71 33.47 5.35
16.0 0.94 33.50 -5.16 0.55 -78.00 -18.64 0.117 -64.67 0.75 27.23 4.93
17.0 0.94 28.40 -5.30 0.54 -84.20 -17.72 0.130 -71.07 0.77 20.77 4.97
18.0 0.93 24.90 -6.29 0.49 -88.30 -17.86 0.128 -75.90 0.79 15.87 3.70
Notes:
1. The Fmin values are based on a set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these
measurements Fmin is calculated. Refer to the noise parameter measurement section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.010 inch thick alumina carrier assembly. The input reference plane is at the
end of the gate pad. The output reference plane is at the end of the drain pad.
Typical Noise Parameters, V
DS
= 4V, I
DS
= 40 mA
Freq
GHz
F
min
dB
opt
Mag.
opt
Ang. R
n/50
G
a
dB
0.50 0.4 0.335 0.5 0.07 21.8
0.90 0.43 0.332 27.9 0.06 18.83
1.00 0.44 0.332 34.3 0.06 18.59
1.50 0.48 0.338 63.8 0.05 16.22
1.80 0.51 0.345 79.6 0.05 15.46
2.00 0.52 0.352 89.3 0.05 14.61
2.50 0.57 0.373 111.3 0.05 13.34
3.00 0.61 0.4 130 0.04 12.29
4.00 0.69 0.467 158.9 0.03 10.47
5.00 0.78 0.542 178.7 0.03 8.96
6.00 0.86 0.617 -167.8 0.02 8.05
7.00 0.95 0.68 -158.1 0.04 7.19
8.00 1.03 0.724 -149.3 0.06 6.41
9.00 1.12 0.738 -138.9 0.1 6.15
10.00 1.2 0.712 -124.2 0.18 5.07
P1-P3P4-P6P7-P9P10-P12P13-P15

ATF-331M4-TR1

Mfr. #:
Buy ATF-331M4-TR1
Manufacturer:
Broadcom / Avago
Description:
RF JFET Transistors Transistor GaAs Low Noise
Lifecycle:
New from this manufacturer.
Delivery:
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