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NSVBAV70DXV6T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2015
April, 2015 − Rev. 6
1 Publication Order Number:
BAV70DXV6T1/D
BAV70DXV6,
NSVBAV70DXV6
Monolithic Dual Switching
Diode Common Cathode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating Symbol Value Unit
Reverse Voltage V
R
100 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
500 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
JA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation, T
A
= 25°C
Derate above 25°C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
JA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
www.onsemi.com
3
CATHODE
4
ANODE
5
ANODE
Device Package Shipping
†
ORDERING INFORMATION
SOT−563
CASE 463A
1
MARKING DIAGRAM
6
CATHODE
ANODE
1
2
ANODE
BAV70DXV6T1
A4 = Specific Device Code
M = Month Code
G = Pb−Free Package
A4 M G
G
1
BAV70DXV6T5G SOT−563
(Pb−Free)
8000 / Tape &
Reel
(Note: Microdot may be in either location)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
NSVBAV70DXV6T5G SOT−563
(Pb−Free)
8000 / Tape &
Reel
BAV70DXV6, NSVBAV70DXV6
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted) (EACH DIODE)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (Note 2)
(I
(BR)
= 100 Adc)
V
(BR)
100 − Vdc
Reverse Voltage Leakage Current (Note 2)
(V
R
= 25 Vdc, T
J
= 150°C)
(V
R
= 100 Vdc)
(V
R
= 70 Vdc, T
J
= 150°C)
I
R
−
−
−
60
1.0
100
Adc
Diode Capacitance (Note 2)
(V
R
= 0, f = 1.0 MHz)
C
D
− 1.5 pF
Forward Voltage (Note 2)
(I
F
= 1.0 mAdc)
(I
F
= 10 mAdc)
(I
F
= 50 mAdc)
(I
F
= 150 mAdc)
V
F
−
−
−
−
715
855
1000
1250
mVdc
Reverse Recovery Time (Note 2) R
L
= 100
(I
F
= I
R
= 10 mAdc, V
R
= 5.0 Vdc, I
R(REC)
= 1.0 mAdc) (Figure 1)
t
rr
− 6.0 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. For each individual diode while second diode is unbiased.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 10 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 10 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 1.0 mA
OUTPUT PULSE
(I
F
= I
R
= 10 mA; MEASURED
at i
R(REC)
= 1.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAV70DXV6, NSVBAV70DXV6
www.onsemi.com
3
100
0.2 0.4
V
F
, FORWARD VOLTAGE (VOLTS)
0.6 0.8 1.0
1.2
10
1.0
0.1
T
A
= 85°C
10
0
V
R
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
0.01
0.001
10 20 30 40
50
1.0
0
V
R
, REVERSE VOLTAGE (VOLTS)
0.9
0.8
0.7
0.6
C
D
, DIODE CAPACITANCE (pF)
2468
I
F
, FORWARD CURRENT (mA)
Figure 2. Forward Voltage Figure 3. Leakage Current
Figure 4. Capacitance
T
A
= -40°C
T
A
= 25°C
T
A
= 150°C
T
A
= 125°C
T
A
= 85°C
T
A
= 55°C
T
A
= 25°C
I
R
, REVERSE CURRENT (μA)
Curves Applicable to Each Anode
P1-P3P4-P4

NSVBAV70DXV6T5G

Mfr. #:
Buy NSVBAV70DXV6T5G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SOT563 SWITCH DIO
Lifecycle:
New from this manufacturer.
Delivery:
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