NVMFD5C446NLT1G

NVMFD5C446NL
www.onsemi.com
4
TYPICAL CHARACTERISTICS
Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
3025520 40100
10
100
10K
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
R
G
, GATE RESISTANCE ()
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
100101
10
100
1000
0.90.70.60.50.4
1
10
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
10001010.1
0.1
1
10
1000
C, CAPACITANCE (pF)t, TIME (ns)
I
S
, SOURCE CURRENT (A)
I
D
, DRAIN CURRENT (A)
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
V
GS
= 4.5 V
V
DS
= 32 V
I
D
= 5 A
t
r
t
f
t
d(off)
t
d(on)
0.8 1.0
V
GS
= 0 V
T
C
= 25°C
V
GS
10 V
Single Pulse
R
DS(on)
Limit
Thermal Limit
Package Limit
10 s
10 ms
100
1K
0.5 ms
1 ms
Figure 12. Maximum Drain Current vs. Time in
Avalanche
TIME IN AVALANCHE (s)
0.00001
1
10
100
I
PEAK
(A)
T
J(initial)
= 25°C
T
J(initial)
= 100°C
0.0001 0.001 0.01
100
15 35
T
J
= 25°CT
J
= 125°C T
J
= −55°C
Q
G
, TOTAL GATE CHARGE (nC)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
DS
= 32 V
I
D
= 50 A
T
J
= 25°C
Q
GS
Q
GD
0
2
4
6
8
10
0
3020 40
1
3
5
7
9
10 50
NVMFD5C446NL
www.onsemi.com
5
TYPICAL CHARACTERISTICS
Figure 13. Thermal Response
PULSE TIME (sec)
0.010.001 100.0001 0.10.00001 10.000001
0.1
1
10
100
R(t) (°C/W)
100 1000
50% Duty Cycle
Single Pulse
20%
10%
5%
2%
1%
0.01
DEVICE ORDERING INFORMATION
Device Marking Package Shipping
NVMFD5C446NLT1G 5C446L DFN8
(Pb−Free)
1500 / Tape & Reel
NVMFD5C446NLWFT1G 446LWF DFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NVMFD5C446NL
www.onsemi.com
6
PACKAGE DIMENSIONS
DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual)
CASE 506BT
ISSUE E
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
1.27
0.75
1.40
3.70
4.56
8X
PITCH
6.59
4.84
1.00
DIMENSION: MILLIMETERS
2.30
4X
0.70
5.55
4X
0.56
2X
2.08
2X
M 3.25
h −−−
3.50
−−−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED
BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP.
4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL
AS THE TERMINALS.
5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED
AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST
POINT ON THE PACKAGE BODY.
7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS ARE
A.
1234
56
TOP VIEW
SIDE VIEW
BOTTOM VIEW
D1
E1
h
D
E
B
A
0.20 C
0.20 C
2X
2X
DIM MIN
MILLIMETERS
A 0.90
A1 −−−
b 0.33
c 0.20
D 5.15 BSC
D1 4.70
D2 3.90
E 6.15 BSC
E1 5.70
E2 3.90
e 1.27 BSC
G 0.45
K 0.51
L 0.48
A
0.10 C
0.10 C
14
8
e
8X
D2
b1
E2
b
A0.10 B
C
0.05
C
L
DETAIL A
A1
c
4X
5
MAX
−−−
−−−
0.42
−−−
4.90
4.10
5.90
4.15
0.55
−−−
0.61
M
N 1.80 2.00
78
N
PIN ONE
IDENTIFIER
NOTE 7
NOTE 4
C
SEATING
PLANE
DETAIL A
NOTE 6
4X
K
NOTE 3
D3 1.50 1.70
b1 0.33 0.42
4X
D3
G
4X
DETAIL B
DETAIL B
ALTERNATE
CONSTRUCTION
K1 0.56 −−−
K1
3.75
12
_
MAX
1.10
0.05
0.51
0.33
5.10
4.30
6.10
4.40
0.65
−−−
0.71
2.20
1.90
0.51
−−−
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P
UBLICATION ORDERING INFORMATION
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USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
NVMFD5C446NL/D
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NVMFD5C446NLT1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET T6 40V LL S08FL DS
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